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| 型号： | TP0101K-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH D-S 20V TO236 |
| 标准包装： | 3,000 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 650 毫欧 @ 580mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 50µA |
| 闸电荷(Qg) @ Vgs： | 2.2nC @ 4.5V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 带卷 (TR) |
TP0101K
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET, Low-Threshold
PRODUCT SUMMARY
FEATURES
V DS (V)
- 20
R DS(on) ( Ω )
0.65 at V GS = - 4.5 V
0.85 at V GS = - 2.5 V
I D (A) e
- 0.58
- 0.5
? Halogen-free According to IEC 61249-2-21
Available
? TrenchFET ? Power MOSFET
? ESD Protected: 3000 V
APPLICATIONS
? Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories
? Battery Operated Systems, DC/DC Converters
? Power Supply Converter Circuits
? Load/Power Switching-Cell Phones, Pagers
TO-236
(SOT-23)
D
G
S
1
2
3
D
Marking Code: K4ywl
K4 = Part Nu m b er Code for TP0101K
y = Year Code
w = Week Code
l = Lot Tracea b ility
G
100 Ω
Top V ie w
S
Ordering Information: TP0101K-T1-E3 (Lead (P b )-free)
TP0101K-T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
Limit
- 20
±8
Unit
V
Continuous Drain Current (T J = 150 °C) b
Pulsed Drain Current a
Continuous Source-Drain (Diode Current) b
Power Dissipation b
Operating Junction and Storage Temperature Range
T A = 25 °C
T A = 70 °C
T A = 25 °C
T A = 70 °C
I D
I DM
I S
P D
T J , T stg
- 0.58
- 0.46
-2
- 0.3
0.35
0.22
- 55 to 150
A
W
°C
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 board, t ≤ 10 s.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limits
Unit
Thermal Resistance,
Junction-to-Ambient b
R thJA
357
°C/ W
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 board, t ≤ 10 s.
Document Number: 72692
S-83053-Rev. B, 29-Dec-08
www.vishay.com
1
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相关代理商/技术参数 |
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| TP0101T | 功能描述:MOSFET 20V 0.6A 0.35W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| TP0101TS | 功能描述:MOSFET 20V 1A 0.35W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| TP0101TS-T1 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET P-CH 20V 1A 3-Pin TO-236 T/R |
| TP0101T-T1 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET P-CH 20V 0.6A 3-Pin TO-236 T/R |
| TP0102 | 制造商:Distributed By MCM 功能描述:Seal Tape - 1/2'' x 520' 制造商:MCM 功能描述:PTFE THRAAD SEAL TAPE 1/2 X 520 |
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