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参数资料
| 型号： | TP0101K-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH D-S 20V TO236 |
| 标准包装： | 3,000 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 650 毫欧 @ 580mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 50µA |
| 闸电荷(Qg) @ Vgs： | 2.2nC @ 4.5V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 带卷 (TR) |
TP0101K
Vishay Siliconix
SPECIFICATIONS T A = 25 °C, unless otherwise noted
Limits
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V DS
V GS(th)
V GS = 0 V, I D = - 10 μA
V DS = V GS , I D = - 50 μA
- 20
- 0.5
- 0.7
- 1.0
V
Gate-Body Leakage
I GSS
V DS = - 0 V, V GS = ± 4.5 V
±5
Zero Gate Voltage Drain Current
On-State Drain Current a
I DSS
I D(on)
V DS = - 20 V, V GS = 0 V
V DS = - 20 V, V GS = 0 V, T J = 55 °C
V DS ≤ - 5 V, V GS = - 4.5 V
V DS ≤ - 5 V, V GS = - 2.5 V
- 1.2
- 0.5
-1
- 10
μA
A
Drain-Source On-State Resistance a
Forward Transconductance a
Diode Forward Voltage a
R DS(on)
g fs
V SD
V GS = - 4.5 V, I D = - 0.58 A
V GS = - 2.5 V, I D = - 0.5 A
V DS = - 5 V, I D = - 0.58 A
I S = - 0.3 A, V GS = 0 V
0.42
0.64
1300
- 0.9
0.65
0.85
- 1.2
Ω
mS
V
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Time
Turn-Off Time
Q g
Q gs
Q gd
R g
t d(on)
t r
t d(off)
t f
V DS = - 6 V, V GS = - 4.5 V
I D ? - 0.58 A
V DD = - 6 V, R L = 10 Ω
I D ? - 0.58 A, V GEN = - 4.5 V, R g = 6 Ω
1400
300
250
150
25
30
55
38
2200
35
45
85
60
pC
Ω
ns
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 72692
S-83053-Rev. B, 29-Dec-08
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