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参数资料
| 型号： | TP30-180 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | BIDIRECTIONAL, SILICON, TVS DIODE, DO-15 |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 2/6页 |
| 文件大小： | 152K |
| 代理商： | TP30-180 |
TP30-xxx Series
2/6
Symbol
Parameter
Value
Unit
Rth (j-l)
Junction to leads
60
°C/W
Rth (j-a)
Junction to ambient on printed circuit
with standard footprint dimension
100
°C/W
THERMAL RESISTANCES
Symbol
Parameter
VRM
Stand-off voltage
IRM
Leakage current at stand-off voltage
VR
Continuous Reverse voltage
VBR
Breakdown voltage
VBO
Breakover voltage
IH
Holding current
IBO
Breakover current
IPP
Peak pulse current
C
Capacitance
ELECTRICAL CHARACTERISTICS
(Tamb = 25°C)
Symbol
Parameter
Value
Unit
P
Power dissipation on infinite heatsink
Tamb =50
°C3
W
IPP
Peak pulse current
10/1000
s
8/20
s
30
60
A
ITSM
Non repetitive surge peak on-state current
tp=20ms
15
A
I
2t
I
2t value for fusing
tp=20ms
1
A
2s
dV/dt
Critical rate of rise of off-state voltage
VRM
5
kV/
s
Tstg
Tj
Storage temperature range
Maximum junction temperature
-55to+150
150
°C
TL
Maximum lead temperature for soldering during 10s at 5mm for case
230
°C
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)
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