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参数资料
| 型号： | TP30-180 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | BIDIRECTIONAL, SILICON, TVS DIODE, DO-15 |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 5/6页 |
| 文件大小： | 152K |
| 代理商： | TP30-180 |
TP30-xxx Series
5/6
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
0
5
10
15
20
t(s)
ITSM(A)
F = 50Hz
Fig. 1: Non repetitive surge peak on-sate current
versus overload duration (Tj initial = 25°C).
01
234
56
789
10
1
2
5
10
20
50
VT(V)
IT(A)
Tj = 25°C
Fig. 4: On-state voltage versus on-state current
(typical values).
-40
-20
0
20
40
60
80
100
120
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Tj(°C)
IH[Tj] / IH[Tj=25°C]
Fig. 2: Relative variation of holding current versus
junction temperature.
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
1E-1
1E+0
1E+1
1E+2
tp(s)
Zth(j-a)(°CW)
Fig. 5: Variation of thermal impedance junction to
ambient versus pulse duration.
1
10
100
300
0.1
0.2
0.5
1.0
VR(V)
C[VR]/C[VR=1V]
F = 1MHz
Fig. 3: Relative variation of junction capacitance
versus reverse applied voltage (typical values).
-40
-20
0
20
40
60
80
100
0.90
0.95
1.00
1.05
1.10
Tj(°C)
Vbo[Tj]/Vbo[Tj=25°C]
62 V
270 V
Fig. 6: Relative variation of VBO voltage versus
junction temperature.
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