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参数资料
| 型号： | TPC9.1HM3/86A |
| 厂商： | Vishay General Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | TVS 1.5KW 9.1V 5% SMPC |
| 标准包装： | 1,500 |
| 系列： | eSMP™ |
| 电压 - 反向隔离（标准值）： | 7.37V |
| 电压 - 击穿： | 8.19V |
| 功率（瓦特）： | 1500W |
| 电极标记： | 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-277，3-PowerDFN |
| 供应商设备封装： | TO-277A |
| 包装： | 带卷 (TR) |
TPC6.8 thru TPC51A
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Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T A = 25 °C, unless otherwise noted)
DEVICE
TYPE
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
V BR (1) AT I T (V)
MIN. MAX.
TEST
CURRENT
I T
(mA)
STAND-OFF
VOLTAGE
V WM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT V WM
I R (μA)
MAXIMUM
REVERSE
LEAKAGE
AT V WM
T J = 150 °C
I D (μA)
MAXIMUM
PEAK
PULSE
SURGE
CURRENT
I PPM (2) (A)
MAXIMUM
CLAMPING
VOLTAGE
AT I PPM
V C (V)
TPC6.8
TPC6.8A
TPC7.5
TPC7.5A
TPC8.2
TPC8.2A
TPC9.1
TPC9.1A
TPC10
TPC10A
TPC11
TPC11A
TPC12
TPC12A
TPC13
TPC13A
TPC15
TPC15A
TPC16
TPC16A
TPC18
TPC18A
TPC20
TPC20A
TPC22
TPC22A
TPC24
TPC24A
TPC27
TPC27A
TPC30
TPC30A
TPC33
TPC33A
TPC36
TPC36A
TPC39
TPC39A
TPC43
TPC43A
TPC47A
TPC51A
DDP
DEP
DFP
DGP
DHP
DKP
DLP
DMP
DNP
DPP
DQP
DRP
DSP
DTP
DUP
DVP
DWP
DXP
DYP
DZP
EDP
EEP
EFP
EGP
EHP
EKP
ELP
EMP
ENP
EPP
EQP
ERP
ESP
ETP
EUP
EVP
EWP
EXP
EYP
EZP
FEP
FGP
6.12
6.45
6.75
7.13
7.38
7.79
8.19
8.65
9.0
9.5
9.9
10.5
10.8
11.4
11.7
12.4
13.5
14.3
14.4
15.2
16.2
17.1
18.0
19.0
19.8
20.9
21.6
22.8
24.3
25.7
27.0
28.5
29.7
31.4
32.4
34.2
35.1
37.1
38.7
40.9
44.7
48.5
7.48
7.14
8.25
7.88
9.02
8.61
10.0
9.55
11.0
10.5
12.1
11.6
13.2
12.6
14.3
13.7
16.5
15.8
17.6
16.8
19.8
18.9
22.0
21.0
24.2
23.1
26.4
25.2
29.7
28.4
33.0
31.5
36.3
34.7
39.6
37.8
42.9
41.0
47.3
45.2
49.4
53.6
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10.2
10.5
11.1
12.1
12.8
12.9
13.6
14.5
15.3
16.2
17.1
17.8
18.8
19.4
20.5
21.8
23.1
24.3
25.6
26.8
28.2
29.1
30.8
31.6
33.3
34.8
36.8
40.2
43.6
1500
1500
500
500
200
200
50
50
20
20
5.0
5.0
2.0
2.0
2.0
2.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
10 000
10 000
5000
5000
2000
2000
500
500
200
200
50
50
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
15
15
15
15
20
20
20
20
139
143
128
133
120
124
109
112
100
103
92.6
96.2
86.7
89.8
78.9
82.4
68.2
70.8
63.8
66.7
56.6
59.5
51.5
54.2
47.0
49.0
43.2
45.2
38.4
40.0
34.5
36.2
31.4
32.8
28.8
30.1
26.6
27.8
24.2
25.3
23.1
21.4
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.2
29.1
27.7
31.9
30.6
34.7
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
56.4
53.9
61.9
59.3
64.8
70.1
Notes
(1) V
BR measured after I T applied for 300 μs, I T = square wave pulse or equivalent
(2) Surge current waveform per fig. 3 and derated per fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
Revision: 21-Sep-12
2
Document Number: 89056
For technical questions within your region: DiodesAmericas@vishay.com , DiodesAsia@vishay.com , DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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