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参数资料
| 型号： | TPC9.1HM3/86A |
| 厂商： | Vishay General Semiconductor |
| 文件页数： | 3/5页 |
| 文件大小： | 0K |
| 描述： | TVS 1.5KW 9.1V 5% SMPC |
| 标准包装： | 1,500 |
| 系列： | eSMP™ |
| 电压 - 反向隔离（标准值）： | 7.37V |
| 电压 - 击穿： | 8.19V |
| 功率（瓦特）： | 1500W |
| 电极标记： | 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-277，3-PowerDFN |
| 供应商设备封装： | TO-277A |
| 包装： | 带卷 (TR) |
TPC6.8 thru TPC51A
www.vishay.com
ORDERING INFORMATION (Example)
Vishay General Semiconductor
PREFERRED P/N
TPC10AHM3/86A (1)
TPC10AHM3/87A (1)
UNIT WEIGHT (g)
0.10
0.10
PREFERRED PACKAGE CODE
86A
87A
BASE QUANTITY
1500
6500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Note
(1) Automotive grade
RATINGS AND CHARACTERISTICS CURVES
(T A = 25 °C unless otherwise noted)
100
T A = 25 °C
Non-Repetiti v e P u lse
10 000
V R , meas u red at
Zero Bias
Wa v eform sho w n in Fig. 3
10
V R meas u red at
Stand-Off Voltage, V WM
1000
1
T J = 25 °C
f = 1.0 MHz
V sig = 50 mV p-p
0.1
100
0.1 μs
1.0 μs
10 μs
100 μs
1.0 ms
10 ms
1
10
100
100
t d - P u lse Width (s)
Fig. 1 - Peak Pulse Power Rating Curve
100
V BR - Breakdown Voltage (V)
Fig. 4 - Typical Junction Capacitance
75
10
50
1
25
0
0.1
R thJA , by mounted
on recommended
PCB 2 oz. area
0
50
100
150
200
0.01
0.1
1
10
100
1000
T J - Initial Temperat u re (°C)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
150
T p - Pul s e Duration ( s )
Fig. 5 - Typical Transient Thermal Impeadnce
t r = 10 μs
T J = 25 °C
P u lse Width (t d )
is defined as the Point
100
Peak Val u e
I PPM
w here the Peak C u rrent
decays to 50 % of I PPM
Half Val u e - I PP
I PPM
2
50
10/1000 μs Wa v eform
as defined by R.E.A.
t d
0
0
1.0
2.0
3.0
4.0
t - Time (ms)
Fig. 3 - Pulse Waveform
Revision: 21-Sep-12
3
Document Number: 89056
For technical questions within your region: DiodesAmericas@vishay.com , DiodesAsia@vishay.com , DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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