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参数资料
| 型号： | TPIC0108BDWPR |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 运动控制电子 |
| 英文描述： | BRUSH DC MOTOR CONTROLLER, PDSO20 |
| 封装： | PLASTIC, SOP-20 |
| 文件页数： | 11/15页 |
| 文件大小： | 289K |
| 代理商： | TPIC0108BDWPR |
TPIC0108B
PWM CONTROL INTELLIGENT HBRIDGE
SLIS068A NOVEMBER1998 REVISED APRIL 2002
5
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics over recommended operating case temperature and supply voltage
ranges (unless otherwise noted) (see Note 2)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
TJ = 25°C
VCC = 6 V to 9 V
380
LSD
TJ = 25°C
VCC = 9 V to 18 V
280
340
m
LSD
TJ = 150°C
VCC = 6 V to 9 V
620
m
rDS(on)
Static drain-source on-resistance
TJ = 150°C
VCC = 9 V to 18 V
400
560
rDS(on)
Static drain-source on-resistance
(per transistor) IBR = 1 A
TJ = 25°C
VCC = 6 V to 9 V
430
(per transistor) IBR = 1 A
HSD
TJ = 25°C
VCC = 9 V to 18 V
280
340
m
HSD
TJ = 150°C
VCC = 6 V to 9 V
640
m
TJ = 150°C
VCC = 9 V to 18 V
400
560
I(QB)
Quiescent battery current
TJ = 25°C
VCC = 13.2 V
20
A
I(QCD)
Open circuit detection current
10
40
100
mA
TSDS
Static thermal shutdown temperature
See Notes 3 and 4
140
°C
TSDD
Dynamic thermal shutdown temperature
See Notes 3 and 5
160
°C
ICS
Current shutdown limit
VCC = 6 V to 9 V
4.8
7.5
A
ICS
Current shutdown limit
VCC = 9 V to 18 V
5
7.5
A
I(CON)
Continuous bridge current
TJ = 125°C, Operating lifetime 10,000 hours,
(see Figure 1)
3
A
V(OVCC)
Over voltage detection on VCC
27
36
V
V(STL)
STATUS low output voltage
IO = 100 A
0.8
V
V(ST2H)
STATUS2 high output voltage
IO = 20 A
3.9
5.4
V
I(ST(OFF)) STATUS output leakage current
V(ST) = 5 V
5
A
VIL
Low level logic input voltage
0.3
0.8
V
VIH
High level logic input voltage
3.6
7
V
VI
Hysteresis of input voltage
0.3
V
IIH
High level logic input current
VIH = 3.5 V
2
10
50
A
NOTES:
2. The device functions according to the function table for VCC between 18 V and V(OVCC), but only up to a maximum supply voltage
of 33 V (no parameters specified). Exposure beyond 18 V for extended periods may affect device reliability.
3. Exposure beyond absolute-maximum-rated condition of junction temperature may affect device reliability.
4. No temperature gradient between DMOS transistor and temperature sensor.
5. With temperature gradient between DMOS transistor and temperature sensor in a typical application (DMOS transistor as heat
source).
switching characteristics over recommended operating case temperature and supply voltage
ranges (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
tout(on)
High-side driver turn-on time
VDS(on)<1 V at 1 A,
VCC = 13.2 V
100
s
tout(on)
Low-side driver turn-on time
VDS(on)<1 V at 1 A,
VCC = 13.2 V
100
s
SR
Slew rate, low-to-high sinusoidal (
δV/δt)
VCC = 13.2 V,
IO = 1 A resistive load
1
6
V/ s
SR
Slew rate, high-to-low sinusoidal (
δV/δt)
VCC = 13.2 V,
IO = 1 A resistive load
1
6
V/
s
td(QCD)
Under current spike duration to trigger
open circuit detection
VCC = 5 V to 18 V
1
10
ms
td(CS)
Delay time for over current shutdown
5
10
25
s
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