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| 型号： | TPS2816MDBVREP |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | MOSFETs |
| 英文描述： | 2 A BUF OR INV BASED MOSFET DRIVER, PDSO5 |
| 封装： | PLASTIC, SOT-23, 5 PIN |
| 文件页数： | 1/25页 |
| 文件大小： | 674K |
| 代理商： | TPS2816MDBVREP |
1
FEATURES
3
2
1
4
5
IN
VCC
VDD
OUT
TPS2816, TPS2817
TPS2818, TPS2819
DBV PACKAGE
(TOP VIEW)
GND
3
2
1
4
5
IN
VCC
NC
OUT
DBV PACKAGE
(TOP VIEW)
GND
TPS2828, TPS2829
NC No internal connection
DESCRIPTION/ORDERING INFORMATION
SGDS039 – FEBRUARY 2008
www.ti.com
SINGLE-CHANNEL HIGH-SPEED MOSFET DRIVER
Controlled Baseline
–
One Assembly Site
–
One Test Site
–
One Fabrication Site
Extended Temperature Performance of –55°C
to 125
°C
Enhanced Diminishing Manufacturing Sources
(DMS) Support
Enhanced Product-Change Notification
Qualification Pedigree (1)
Low-Cost Single-Channel High-Speed MOSFET
Driver
I
CC . . . 15 A Max (TPS2828, TPS2829)
25 ns Max Rise/Fall Times and 40 ns Max
Propagation Delay . . . 1 nF Load
2 A Peak Output Current
4 V to 14 V Driver Supply Voltage Range;
Internal Regulator Extends Range to 40 V
(TPS2816, TPS2817, TPS2818, TPS2819)
5-pin SOT-23 Package
–55°C to 125°C Ambient-Temperature
Operating Range
Highly Resistant to Latch-ups
(1)
Component qualification in accordance with JEDEC and
industry standards to ensure reliable operation over an
extended temperature range. This includes, but is not limited
to, Highly Accelerated Stress Test (HAST) or biased 85/85,
temperature cycle, autoclave or unbiased HAST,
electromigration, bond intermetallic life, and mold compound
life. Such qualification testing should not be viewed as
justifying use of this component beyond specified
performance and environmental limits.
The TPS28xx single-channel high-speed MOSFET drivers are capable of delivering peak currents of up to 2 A
into highly capacitive loads. High switching speeds (tr and tf = 14 ns typ) are obtained with the use of BiCMOS
outputs. Typical threshold switching voltages are 2/3 and 1/3 of VCC. The design inherently minimizes
shoot-through current.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
UNLESS
OTHERWISE
NOTED
this
document
contains
Copyright 2008, Texas Instruments Incorporated
PRODUCTION DATA information current as of publication date.
Products conform to specifications per the terms of Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TPS2817DBVR | 功能描述:功率驱动器IC 2A HS Non-Invert RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TPS2817DBVRG4 | 功能描述:功率驱动器IC Non-inv H-S MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TPS2817DBVT | 功能描述:功率驱动器IC Non-inv H-S MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TPS2817DBVTG4 | 功能描述:功率驱动器IC Non-inv H-S MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TPS2818DBVR | 功能描述:功率驱动器IC 2A HS Inverting RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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