- 您现在的位置：买卖IC网 > PDF目录199467 > TPS2816MDBVREP (TEXAS INSTRUMENTS INC) 2 A BUF OR INV BASED MOSFET DRIVER, PDSO5 PDF资料下载
参数资料
| 型号： | TPS2816MDBVREP |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | MOSFETs |
| 英文描述： | 2 A BUF OR INV BASED MOSFET DRIVER, PDSO5 |
| 封装： | PLASTIC, SOT-23, 5 PIN |
| 文件页数： | 7/25页 |
| 文件大小： | 674K |
| 代理商： | TPS2816MDBVREP |
www.ti.com
APPLICATION INFORMATION
Regulator
0.1
F
1
2
3
5
4
Input
TPS2816
VCC
Load
Regulator
4.7
F
1
2
3
5
4
Input
TPS2816
VDD
Load
0.1
F
+
SGDS039 – FEBRUARY 2008
MOSFETs are voltage-driven devices that require very little steady-state drive current. However, the large input
capacitance (200 pF to 3000 pF or greater) of these devices requires large current surges to reduce the turn-on
and turn-off times. The TPS2816 series of high-speed drivers can supply up to 2 A to a MOSFET, greatly
reducing the switching times. The fast rise times and fall times and short propagation delays allow for operation
in today's high-frequency switching converters.
In addition, MOSFETs have a limited gate-bias voltage range, usually less than 20 V. The TPS2816 series of
drivers extends this operating range by incorporating an on-board series regulator with an input range up to 40 V.
This regulator can be used to power the drivers, the PWM chip, and other circuitry, providing the power
dissipation rating is not exceeded.
When using these devices, care should be exercised in the proper placement of the driver, the switching
MOSFET, and the bypass capacitor. Because of the large input capacitance of the MOSFET, the driver should
be placed close to the gate to eliminate the possibility of oscillations caused by trace inductance ringing with the
gate capacitance of the MOSFET. When the driver output path is longer than approximately 2 inches, a resistor
in the range of 10
should be placed in series with the gate drive as close as possible to the MOSFET. A
ceramic bypass capacitor is also recommended to provide a source for the high-speed current transients that the
MOSFET requires. This capacitor should be placed between VCC and GND of the driver (see Figure 20 and
Figure 20. VCC < 14 V
Figure 21. VCC > 14 V
The on-board series regulator supplies approximately 20 mA of current at 11.5 V, some of which can be used for
Copyright 2008, Texas Instruments Incorporated
15
相关PDF资料 |
PDF描述 |
|---|---|
| TPS3305-33Y | 2-CHANNEL POWER SUPPLY MANAGEMENT CKT, UUC8 |
| TPS3807A30DCKT | 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5 |
| TPS40120PWRG4 | SPECIALTY ANALOG CIRCUIT, PDSO14 |
| TPS40222DRPTG4 | 3.5 A SWITCHING REGULATOR, 1500 kHz SWITCHING FREQ-MAX, PDSO6 |
| TPS5103IDBG4 | 3 A SWITCHING CONTROLLER, 500 kHz SWITCHING FREQ-MAX, PDSO20 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TPS2817DBVR | 功能描述:功率驱动器IC 2A HS Non-Invert RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TPS2817DBVRG4 | 功能描述:功率驱动器IC Non-inv H-S MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TPS2817DBVT | 功能描述:功率驱动器IC Non-inv H-S MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TPS2817DBVTG4 | 功能描述:功率驱动器IC Non-inv H-S MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TPS2818DBVR | 功能描述:功率驱动器IC 2A HS Inverting RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。