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参数资料
| 型号： | TPS2816MDBVREP |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | MOSFETs |
| 英文描述： | 2 A BUF OR INV BASED MOSFET DRIVER, PDSO5 |
| 封装： | PLASTIC, SOT-23, 5 PIN |
| 文件页数： | 22/25页 |
| 文件大小： | 674K |
| 代理商： | TPS2816MDBVREP |
www.ti.com
TPS28xx ELECTRICAL CHARACTERISTICS
Outputs
Regulator, TPS2816 Through TPS2819
Supply Current
SGDS039 – FEBRUARY 2008
Inputs
over recommended operating ambient temperature range, VCC = 10 V, VDD tied to VCC, CL = 1 nF (unless otherwise specified)
PARAMETER
TEST CONDITIONS
MIN
TYP(1)
MAX
UNIT
VCC = 5 V
3.3
4
Positive-going input threshold voltage
VCC = 10 V
6.6
7
V
VCC = 14 V
9.3
10
VCC = 5 V
1
1.7
Negative-going input threshold voltage
VCC = 10 V
2
3.3
V
VCC = 14 V
2.5
4.6
Input voltage hysteresis
1.3
V
Input current, TPS2818/19/28/29
Input = 0 V or VCC
0.2
A
Input = 0 V
650
Input current, TPS2816/17
A
Input = VCC
15
Input capacitance
5
10
pF
(1)
Typical are for TA = 25°C (unless otherwise noted).
PARAMETER
TEST CONDITIONS
MIN
TYP(1)
MAX
UNIT
IO = –1 mA
9.75
9.9
High-level output voltage
V
IO = –100 mA
8
9.1
IO = 1 mA
0.18
0.25
Low-level output voltage
V
IO = 100 mA
1
2
(1)
Typical are for TA = 25°C (unless otherwise noted).
PARAMETER
TEST CONDITIONS
MIN
TYP(1)
MAX
UNIT
14
≤ VDD ≤ 40 V,
Output voltage
10
11.5
13
V
0
≤ IO ≤ 20 mA
IO = 10 mA,
Output voltage in dropout
8
10
V
VDD = 10 V
(1)
Typical are for TA = 25°C (unless otherwise noted).
PARAMETER
TEST CONDITIONS
MIN
TYP(1)
MAX
UNIT
IN = high = 10 V
150
250
TPS2816,
TPS2817
IN = low = 0 V
650
1000
TPS2818,
Supply current into VCC
A
25
55
TPS2819
IN = high or low,
High = 10 V, Low = 0 V
TPS2828,
0.1
15
TPS2829
TPS2816,
VDD = 20 V,
650
1000
TPS2817
IN = high = 10 V or low = 0 V
Supply current into VDD
A
TPS2818,
VDD = 20 V,
50
400
TPS2819
IN = high = 10 V or low = 0 V
(1)
Typical are for TA = 25°C (unless otherwise noted).
6
Copyright 2008, Texas Instruments Incorporated
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| TPS2817DBVR | 功能描述:功率驱动器IC 2A HS Non-Invert RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TPS2817DBVRG4 | 功能描述:功率驱动器IC Non-inv H-S MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TPS2817DBVT | 功能描述:功率驱动器IC Non-inv H-S MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TPS2817DBVTG4 | 功能描述:功率驱动器IC Non-inv H-S MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TPS2818DBVR | 功能描述:功率驱动器IC 2A HS Inverting RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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