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参数资料
| 型号： | TPS24711 |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 电源管理 |
| 英文描述： | POWER SUPPLY SUPPORT CKT, PDSO10 |
| 封装： | GREEN, PLASTIC, MSOP-10 |
| 文件页数： | 19/34页 |
| 文件大小： | 2148K |
| 代理商： | TPS24711 |
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GATE
ISS
VCC
t
C
I
C
V
D
=
-
÷
è
Partof
TPS2471x
M
1
ToLoad
GND
GATE
FromSource
R
GATE
1k
C
GATE
S0509-02
I
30 A
GATE
SLVSAL2C
– JANUARY 2011 – REVISED MAY 2011
(14)
Figure 36. Gate Capacitor (dV/dt) Control Inrush Mode.
ADDITIONAL DESIGN CONSIDERATIONS
Use of PG/PGb
Use the PG/PGb pin to control and coordinate a downstream dc/dc converter. If this is not done, then a long time
delay is needed to allow COUT to fully charge before the converter starts. An undesirable latch-up condition can
be created between the TPS24710/11/12/13 output characteristic and the dc/dc converter input characteristic if
the converter starts while COUT is still charging; the PG/PGb pin is one way to avoid this
Output Clamp Diode
Inductive loads on the output may drive the OUT pin below GND when the circuit is unplugged or during a
current-limit event. The OUT pin ratings can be satisfied by connecting a diode from OUT to GND. The diode
should be selected to control the negative voltage at the full short-circuit current. Schottky diodes are generally
recommended for this application.
Gate Clamp Diode
The TPS24710/11/12/13 has a relatively well-regulated gate voltage of 12 V to 15.5 V with a supply voltage VVCC
higher than 4 V. A small clamp Zener from gate to source of M1 is recommended if VGS of M1 is rated below 12
V. A series resistance of several hundred ohms or a series silicon diode is recommended to prevent the output
capacitance from discharging through the gate driver to ground.
High-Gate-Capacitance Applications
Gate voltage overstress and abnormally large fault current spikes can be caused by large gate capacitance. An
external gate clamp Zener diode is recommended to assist the internal Zener if the total gate capacitance of M1
exceeds about 4000 pF. When gate capacitor dV/dt control is used, a 1-k
Ω resistor in series with CGATE is
recommended (see Figure 36). If the series R-C combination is used for MOSFETs with CISS less than 3000 pF,
then a Zener diode is not necessary.
26
Copyright
2011, Texas Instruments Incorporated
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| TPS24711DGS | 功能描述:热插拔功率分布 2.5-18V Hi Eff Hot- Swap Controller RoHS:否 制造商:Texas Instruments 产品:Controllers & Switches 电流限制: 电源电压-最大:7 V 电源电压-最小:- 0.3 V 工作温度范围: 功率耗散: 安装风格:SMD/SMT 封装 / 箱体:MSOP-8 封装:Tube |
| TPS24711DGSR | 功能描述:热插拔功率分布 2.5-18V Hi Eff Hot- Swap Controller RoHS:否 制造商:Texas Instruments 产品:Controllers & Switches 电流限制: 电源电压-最大:7 V 电源电压-最小:- 0.3 V 工作温度范围: 功率耗散: 安装风格:SMD/SMT 封装 / 箱体:MSOP-8 封装:Tube |
| TPS24711EVM-004 | 功能描述:电源管理IC开发工具 TPS24711 Eval Mod RoHS:否 制造商:Maxim Integrated 产品:Evaluation Kits 类型:Battery Management 工具用于评估:MAX17710GB 输入电压: 输出电压:1.8 V |
| TPS24712DGS | 功能描述:热插拔功率分布 2.5-18V Hi Eff Pwr- Ltd Hot-Swap Cntrlr RoHS:否 制造商:Texas Instruments 产品:Controllers & Switches 电流限制: 电源电压-最大:7 V 电源电压-最小:- 0.3 V 工作温度范围: 功率耗散: 安装风格:SMD/SMT 封装 / 箱体:MSOP-8 封装:Tube |
| TPS24712DGSR | 功能描述:热插拔功率分布 2.5-18V Hi Eff Pwr- Ltd Hot-Swap Cntrlr RoHS:否 制造商:Texas Instruments 产品:Controllers & Switches 电流限制: 电源电压-最大:7 V 电源电压-最小:- 0.3 V 工作温度范围: 功率耗散: 安装风格:SMD/SMT 封装 / 箱体:MSOP-8 封装:Tube |
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