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参数资料
| 型号： | TPS2552DRVT |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 电源管理 |
| 英文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO6 |
| 封装： | GREEN, PLASTIC, SON-6 |
| 文件页数： | 23/32页 |
| 文件大小： | 1025K |
| 代理商： | TPS2552DRVT |
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SLVS841D
– NOVEMBER 2008 – REVISED JUNE 2011
RECOMMENDED OPERATING CONDITIONS
MIN
MAX
UNIT
VIN
Input voltage, IN
2.5
6.5
V
VEN
TPS2552/52-1
0
6.5
Enable voltage
V
V EN
TPS2553 /53-1
0
6.5
VIH
High-level input voltage on EN or EN
1.1
V
VIL
Low-level input voltage on EN or EN
0.66
–40 °C ≤ TJ ≤ 125 °C
0
1.2
IOUT
Continuous output current, OUT
A
–40 °C ≤ TJ ≤ 105 °C
0
1.5
RILIM
Current-limit threshold resistor range (nominal 1%) from ILIM to GND
15
232
k
IO
Continuous FAULT sink current
0
10
mA
Input de-coupling capacitance, IN to GND
0.1
μF
IOUT ≤ 1.2 A
–40
125
Operating virtual junction
TJ
°C
temperature(1)
IOUT ≤ 1.5 A
-40
105
(1)
See
"Dissipation Rating Table" and "Power Dissipation and Junction Temperature" sections for details on how to calculate maximum
junction temperature for specific applications and packages.
ELECTRICAL CHARACTERISTICS
over recommended operating conditions, VEN = 0 V, or VEN = VIN, RFAULT = 10 k (unless otherwise noted)
PARAMETER
TEST CONDITIONS(1)
MIN
TYP
MAX
UNIT
POWER SWITCH
DBV package, TJ = 25°C
85
95
DBV package,
–40°C ≤TJ ≤125°C
135
rDS(on) Static drain-source on-state resistance DRV package, TJ = 25°C
100
115
m
DRV package,
–40°C ≤TJ ≤105°C
140
DRV package,
–40°C ≤TJ ≤125°C
150
VIN = 6.5 V
1.1
1.5
tr
Rise time, output
VIN = 2.5 V
0.7
1
CL = 1 μF, RL = 100 ,
ms
(see Figure 2)
VIN = 6.5 V
0.2
0.5
tf
Fall time, output
VIN = 2.5 V
0.2
0.5
ENABLE INPUT EN OR EN
Enable pin turn on/off threshold
0.66
1.1
V
IEN
Input current
VEN = 0 V or 6.5 V, VEN = 0 V or 6.5 V
–0.5
0.5
μA
ton
Turnon time
3
ms
toff
Turnoff time
3
ms
CURRENT LIMIT
RILIM = 15 k
–40°C ≤TJ ≤105°C
1610
1700
1800
TJ = 25°C
1215
1295
1375
RILIM = 20 k
–40°C ≤TJ ≤125°C
1200
1295
1375
Current-limit threshold (Maximum DC output current IOUT delivered to
IOS
TJ = 25°C
490
520
550
mA
load) and Short-circuit current, OUT connected to GND
RILIM = 49.9 k
–40°C ≤TJ ≤125°C
475
520
565
RILIM = 210 k
110
130
150
ILIM shorted to IN
50
75
100
tIOS
Response time to short circuit
2
μs
REVERSE-VOLTAGE PROTECTION
Reverse-voltage comparator trip point
95
135
190
mV
(VOUT – VIN)
Time from reverse-voltage condition to
VIN = 5 V
3
5
7
ms
MOSFET turn off
(1)
Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account
separately.
Copyright
2008–2011, Texas Instruments Incorporated
3
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