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参数资料
| 型号： | TPS3600D33PWRG4 |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 电源管理 |
| 英文描述： | 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO14 |
| 封装： | 5.10 X 6.60 MM, GREEN, PLASTIC, TSSOP-14 |
| 文件页数： | 25/26页 |
| 文件大小： | 677K |
| 代理商： | TPS3600D33PWRG4 |
TPS3600D20, TPS3600D25, TPS3600D33, TPS3600D50
BATTERY BACKUP SUPERVISORS FOR LOW POWER PROCESSORS
SLVS336B DECEMBER 2000 REVISED JANUARY 2007
8
detailed description (continued)
power-fail comparator (PFI and PFO)
An additional comparator is provided to monitor voltages other than the nominal supply voltage. The power-fail
input (PFI) will be compared with an internal voltage reference of 1.15 V. If the input voltage falls below the
power-fail threshold, V(PFI), of 1.15 V typical, the power-fail output (PFO) goes low. If it goes above V(PFI) plus
about 12-mV hysteresis, the output returns to high. By connecting two external resistors, it is possible to
supervise any voltages above V(PFI). The sum of both resistors should be about 1 M, to minimize power
consumption and also to ensure that the current in the PFI pin can be neglected compared with the current
through the resistor network. The tolerance of the external resistors should be not more than 1% to ensure
minimal variation of sensed voltage.
If the power-fail comparator is unused, connect PFI to ground and leave PFO unconnected.
BATTON
Most often BATTON is used as a gate drive for an external pass transistor for high-current applications. In
addition it can be also used as a logic output to indicate the battery switchover status. BATTON is high when
VOUT is connected to VBAT.
BATTON can be directly connected to the gate of a PMOS transistor (see Figure 3). No current-limiting resistor
is required. When using a PMOS transistor, it must be connected backwards from the traditional method (see
Figure 3). This method orients the body diode from VDD to VOUT and prevents the backup battery from
discharging through the FET when its gate is high.
TPS3600
VDD
VOUT
BATTON
DS
G
GND
PMOS FET
Body Diode
Figure 3. Driving an External MOSFET Transistor With BATTON
backup-battery switchover
In the event of a brownout or power failure, it may be necessary to keep a processor running. If a backup battery
is installed at VBAT, the devices automatically connect the processor to backup power when VDD fails. In order
to allow the backup battery (e.g., a 3.6-V lithium cell) to have a higher voltage than VDD, this family of supervisors
will not connect VBAT to VOUT when VBAT is greater than VDD. VBAT only connects to VOUT (through a 2- switch)
when VOUT falls below V(SWN) and VBAT is greater than VDD. When VDD recovers, switchover is deferred either
until VDD crosses VBAT, or when VDD rises above the threshold V(SWP). (See the timing diagram)
VDD > VBAT
VDD > V(SW)
VOUT
1
VDD
1
0
VDD
0
1
VDD
0
VBAT
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TPS3600D50 | 制造商:TI 制造商全称:Texas Instruments 功能描述:BATTERY-BACKUP SUPERVISORS FOR LOW-POWER PROCESSORS |
| TPS3600D50PW | 功能描述:监控电路 Battery-Backup for LP Processor RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| TPS3600D50PWG4 | 功能描述:监控电路 Battery-Backup for LP Processor RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| TPS3600D50PWR | 功能描述:监控电路 Battery-Backup for LP Processor RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| TPS3600D50PWRG4 | 功能描述:监控电路 Battery-Backup for LP Processor RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
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