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参数资料
| 型号： | TPS3619-50MDGK |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 电源管理 |
| 英文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8 |
| 封装： | PLASTIC, MSOP-8 |
| 文件页数： | 2/18页 |
| 文件大小： | 451K |
| 代理商： | TPS3619-50MDGK |
0
0.5
1
1.5
2
2.5
3
3.5
0
5
10
15
20
25
TA = 25°C
TA = 85°C
TA = 0°C
TA = 40°C
IOL Low-Level Output Current mA
VDD = 3.3 V
VBAT = GND
V
O
L
–
Low-Level
Output
V
oltage
at
RESET
–
V
0
100
200
300
400
500
0
1
2
3
4
5
TA = 40°C
TA = 25°C
TA = 85°C
TA = 0°C
IOL Low-Level Output Current mA
VDD = 3.3 V
VBAT = GND
Expanded View
V
O
L
–
Low-Level
Output
V
oltage
at
RESET
–
mV
0
1
2
3
4
5
6
7
8
9
10
0
0.1
0.2
0.3
0.4 0.5
0.6
0.7
0.8
0.9
Minimum
Pulse
Duration
at
V
DD
Threshold Overdrive at VDD V
1
s
0.6
1
1.4
1.8
2.2
2.6
3
3.4
3.8
4.2
4.6
5
0
0.1
0.2
0.3
0.4
0.5
0.6 0.7 0.8
0.9
1
Minimum
Pulse
Duration
at
PFI
Threshold Overdrive at PFI V
VDD = 1.65 V
s
SGLS350C – JULY 2006 – REVISED SEPTEMBER 2010
www.ti.com
TYPICAL CHARACTERISTICS (continued)
LOW-LEVEL OUTPUT VOLTAGE AT RESET
vs
LOW-LEVEL OUTPUT CURRENT
Figure 9.
Figure 10.
MINIMUM PULSE DURATION AT VDD
MINIMUM PULSE DURATION AT PFI
vs
THRESHOLD OVERDRIVE AT VDD
THRESHOLD OVERDRIVE AT PFI
Figure 11.
Figure 12.
10
Copyright 2006–2010, Texas Instruments Incorporated
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| TPS3620-33DGKR | 功能描述:监控电路 3.3-V Battery-Backup for RAM Retention RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| TPS3620-33DGKRG4 | 功能描述:监控电路 3.3-V Battery-Backup for RAM Retention RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
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