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| 型号： | TPS40193DRCR |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 稳压器 |
| 英文描述： | SWITCHING CONTROLLER, 360 kHz SWITCHING FREQ-MAX, PDSO10 |
| 封装： | 3 X 3 MM, GREEN, PLASTIC, SON-10 |
| 文件页数： | 15/38页 |
| 文件大小： | 707K |
| 代理商： | TPS40193DRCR |
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Q
GD1 t
P
G1SW
V
IN
I
OUT
V
DD * VT
RDRV
1
f
SW
P
G1COM +
I
OUT
1
12
I
RIPPLE
2
R
DS(on)
D + IL(rms)
R
DS(on)Q1
V
OUT
V
IN
R
DS(on)Q1 +
P
Q1C(on)
I
L(rms)
2
V
OUT
V
IN
R
DS(on)Q2 +
P
Q2C(on)
I
L(rms)
2
1 *
V
OUT
V
IN
C
BOOST + 20
Q
G1
SLUS719C – MARCH 2007 – REVISED AUGUST 2010
www.ti.com
For this design switching losses will be highest at high-line Designing for 1 W of total losses in each MOSFETS
and 60% of the total high-side FET losses in switching losses, we can estimate our maximum gate-drain charge
for the design by using Equation 18.
(18)
For a 2-V gate threshold MOSFET, the TPS40192's 5-V gate drive, and the TPS40192's 2.5-
drive resistance,
we estimate a maximum gate-to-drain charge of 8.5 nC. The switching losses of the synchronous rectifier are
lower than the switching losses of the main FET because the voltage across the FET at the point of switching is
reduced to the forward voltage drop across the body diode of the SR FET and are estimated by using
The conduction losses in the main FET are estimated by the RMS current through the FET times its RDS(on).
(19)
Estimating about 40% of total MOSFET losses to be high-side conduction losses, the maximum RDS(on) of the
high-side FET can be estimated by using Equation 20.
(20)
For this design with IL_RMS = 11.22 ARMS and 8 V to 1.8 V design, calculate RDS(on)Q1 < 17.3 m for our main
switching FET.
Estimating 80% of total low-side MOSFET losses in conduction losses, repeat the calculation for the
synchronous rectifier, whose losses are dominated by the conduction losses. Calculate the maximum RDS(on) of
the synchronous rectifier by Equation 21.
(21)
For this design IL(RMS) = 10.22 A at VIN = 14 V to 1.8 V RDS(on)Q2(max) = 8.8 m.
Table 5. Inductor Requirements VIN = 4.5 V
PARAMETER
SYMBOL
VALUE
UNITS
High-side MOSFET on-resistance
RDS(on)
17.3
m
High-side MOSFET gate-to-drain
QGD1
8.5
nC
charge
Low-side MOSFET on-resistance
RDS(on)Q2
8.8
m
The IRF7466 has an RDS(on)MAX of 17 m at 4.5-V gate drive and only 8.0-nC VGD "Miller" charge with a 4.5-V
gate drive, and is chosen as a high-side FET. The IRF7834 has an RDS(on)MAX of 5.5 m at 4.5-V gate drive and
44 nC of total gate charge. These two FETs have maximum total gate charges of 23 nC and 44 nC respectively,
which draws 40.2-mA from the 5-V regulator, less than its 50-mA minimum rating.
Boot Strap Capacitor
To ensure proper charging of the high-side FET gate, limit the ripple voltage on the boost capacitor to less than
50 mV.
(22)
Based on the IRF7466 MOSFET with a gate charge of 23 nC, we calculate minimum of 460 nF of capacitance.
The next higher standard value of 470 nF is selected for the bootstrap capacitor.
22
Copyright 2007–2010, Texas Instruments Incorporated
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| TPS40193DRCRG4 | 功能描述:DC/DC 开关控制器 4.5V-18V Input Synch Buck Cntrlr RoHS:否 制造商:Texas Instruments 输入电压:6 V to 100 V 开关频率: 输出电压:1.215 V to 80 V 输出电流:3.5 A 输出端数量:1 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:CPAK |
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| TPS40193DRCT | 制造商:Texas Instruments 功能描述:; Leaded Process Compatible:Yes; Peak Re 制造商:Texas Instruments 功能描述:IC, SYNC BUCK CONTROLLER, SON-10 |
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