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参数资料
| 型号： | TPS51116RGER |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 稳压器 |
| 英文描述： | 6 A SWITCHING CONTROLLER, PQCC24 |
| 封装： | 4 X 4 MM, GREEN, PLASTIC, QFN-24 |
| 文件页数： | 14/40页 |
| 文件大小： | 931K |
| 代理商： | TPS51116RGER |
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ESR +
V
OUT
0.015
I
RIPPLE
0.75
[
VOUT
I
OUT(max)
60 [mW]
(25)
Thermal Design
W
DSRC + VVLDOIN * VVTT
I
VTT
(26)
W
DSNK + VVTT
I
VTT
(27)
W
PKG +
T
J(max) * TA(max)
qJA
(28)
www.ti.com................................................................................................................................................................ SLUS609H – MAY 2004 – REVISED JULY 2009
The external components selection is much simple in D-CAP mode.
1. Choose inductor. This section is the same as the current mode. Please refer to the instructions in the
Current Mode Operation section.
2. Choose output capacitor(s).Organic semiconductor capacitor(s) or specialty polymer capacitor(s) are
recommended. Determine ESR to meet required ripple voltage above. A quick approximation is shown in
Primary power dissipation of TPS51116 is generated from VTT regulator. VTT current flow in both source and
sink directions generate power dissipation from the part. In the source phase, potential difference between
VLDOIN and VTT times VTT current becomes the power dissipation, WDSRC.
In this case, if VLDOIN is connected to an alternative power supply lower than VDDQ voltage, power loss can be
decreased.
For the sink phase, VTT voltage is applied across the internal LDO regulator, and the power dissipation, WDSNK,
is calculated by Equation 27:
Since this device does not sink AND source the current at the same time and IVTT varies rapidly with time, actual
power dissipation need to be considered for thermal design is an average of above value. Another power
consumption is the current used for internal control circuitry from V5IN supply and VLDOIN supply. V5IN
supports both the internal circuit and external MOSFETs drive current. The former current is in the VLDOIN
supply can be estimated as 1.5 mA or less at normal operational conditions.
These powers need to be effectively dissipated from the package. Maximum power dissipation allowed to the
package is calculated by Equation 28,
where
T
J(max) is 125°C
T
A(max) is the maximum ambient temperature in the system
θ
JA is the thermal resistance from the silicon junction to the ambient
Copyright 2004–2009, Texas Instruments Incorporated
21
Product Folder Link(s): TPS51116
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TPS51116RGERG4 | 功能描述:DC/DC 开关控制器 DDR2 SWITCHER AND LDO RoHS:否 制造商:Texas Instruments 输入电压:6 V to 100 V 开关频率: 输出电压:1.215 V to 80 V 输出电流:3.5 A 输出端数量:1 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:CPAK |
| TPS51116RGET | 功能描述:DC/DC 开关控制器 DDR2 SWITCHER AND LDO RoHS:否 制造商:Texas Instruments 输入电压:6 V to 100 V 开关频率: 输出电压:1.215 V to 80 V 输出电流:3.5 A 输出端数量:1 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:CPAK |
| TPS51116RGET | 制造商:Texas Instruments 功能描述:DC/DC CONVERTER IC 制造商:Texas Instruments 功能描述:IC, SYNC BUCK CONTROLLER, VQFN-24 |
| TPS51116RGETG4 | 功能描述:DC/DC 开关控制器 DDR2 SWITCHER AND LDO RoHS:否 制造商:Texas Instruments 输入电压:6 V to 100 V 开关频率: 输出电压:1.215 V to 80 V 输出电流:3.5 A 输出端数量:1 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:CPAK |
| TPS51117 | 制造商:TI 制造商全称:Texas Instruments 功能描述:SINGLE SYNCHRONOUS STEP-DOWN CONTROLLER |
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