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参数资料
| 型号： | TPS62111RSATG4 |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 稳压器 |
| 英文描述： | 2.4 A SWITCHING REGULATOR, 1100 kHz SWITCHING FREQ-MAX, PQCC16 |
| 封装： | GREEN, PLASTIC, QFN-16 |
| 文件页数： | 22/28页 |
| 文件大小： | 842K |
| 代理商： | TPS62111RSATG4 |
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ELECTRICAL CHARACTERISTICS
www.ti.com .................................................................................................................................................... SLVS585A – JULY 2005 – REVISED FEBRUARY 2009
VI = 12 V, VO = 3.3 V, IO = 600 mA, EN = VI, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY CURRENT
VI
Input voltage range
3.1
17
V
IO = 0 mA, SYNC = GND, VI = 7.2 V,
20
TA = 25°C
(1)
I(Q)
Operating quiescent current
A
IO = 0 mA, SYNC = GND, VI = 17 V
(1)
23
26
Quiescent current with enhanced LBI
IQ(LBI)
EN = VI , LBI = GND
10
A
comparator version (TPS62113 only).
EN = GND
1.5
5
I(SD)
Shutdown current
A
EN = GND, TA = 25°C, VI = 7.2 V
1.5
3
ENABLE
VIH
EN high-level input voltage
1.3
V
VIL
EN low-level input voltage
0.3
V
EN trip-point hysteresis
170
mV
Ilkg
EN input leakage current
EN = GND or VI, VI = 12 V
0.01
0.2
A
I(EN)
EN input current
0.6 V
≤ V(EN) ≤ 4 V
10
20
A
V(UVLO)
Undervoltage lockout threshold
Input voltage falling
2.8
3
3.1
V
Undervoltage lockout hysteresis
250
300
mV
POWER SWITCH
VI ≥ 5.4 V; IO = 350 mA
165
250
rDS(ON)
P-channel MOSFET on-resistance
VI = 3.5 V; IO = 200 mA
340
m
VI = 3 V; IO = 100 mA
490
P-channel MOSFET leakage
VDS = 17 V
0.1
1
A
current
P-channel MOSFET current limit
VI = 7.2 V, VO = 3.3 V
2100
2400
2600
mA
VI ≥ 5.4 V; IO = 350 mA
145
200
rDS(ON)
N-channel MOSFET on-resistance
VI = 3.5 V; IO = 200 mA
170
m
VI = 3 V; IO = 100 mA
200
N-channel MOSFET leakage
VDS = 17 V
0.1
2
A
current
POWER-GOOD OUTPUT, LBI, LBO
V(PG)
Power-good trip voltage
VO – 1.6%
V
VO ramping positive
50
Power-good delay time
s
VO ramping negative
200
VOL
PG, LBO output-low voltage
V(FB) = 0.8 × VO nominal, IOL = 1 mA
0.3
V
IOL
PG, LBO sink current
1
mA
PG, LBO output leakage current
V(FB) = VO nominal, V(LBI) = VI
0.01
0.25
A
Minimum supply voltage for valid power
3
V
good, LBI, LBO signal
VLBI
Low-battery input trip voltage
Input voltage falling
1.256
V
ILBI
LBI input leakage current
10
100
nA
Low-battery input trip-point
1.5%
accuracy
VLBI,HYS Low-battery input hysteresis
25
mV
(1)
Device is not switching.
Copyright 2005–2009, Texas Instruments Incorporated
3
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