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参数资料
| 型号： | TPS62122DRVT |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 稳压器 |
| 英文描述： | SWITCHING REGULATOR, PDSO6 |
| 封装： | 2 X 2 MM, GREEN, PLASTIC, SON-6 |
| 文件页数： | 23/33页 |
| 文件大小： | 5549K |
| 代理商： | TPS62122DRVT |
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SLVSAD5 – JULY 2010
RECOMMENDED OPERATING CONDITIONS
MIN
NOM
MAX
UNIT
Supply voltage VIN, device in operation
2
15
V
VIN = 2 V, VOUT = 1.8 V, DCRL = 0.7
25
Output current capability
mA
VIN ≥ 2.5 V, VOUT = 1.8 V, DCRL = 0.7
75
Effective inductance
10
22
33
H
Effective output capacitance
1.0
2
33
F
Output voltage range
1.2
5.5
V
Operating ambient temperature TA
(1), (Unless Otherwise Noted)
–40
85
°C
Operating junction temperature range, TJ
–40
125
°C
(1)
In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may
have to be derated. Maximum ambient temperature (TA(max)) is dependent on the maximum operating junction temperature (TJ(max)), the
maximum power dissipation of the device in the application (PD(max)), and the junction-to-ambient thermal resistance of the part/package
in the application (qJA), as given by the following equation: TA(max) = TJ(max) – (qJA × PD(max)).
ELECTRICAL CHARACTERISTICS
VIN = 8V, VOUT = 1.8V, EN = VIN, TJ = –40°C to 85°C, typical values are at TJ = 25°C (unless otherwise noted), CIN = 4.7F,
L = 22H, COUT = 4.7F, see Parameter Measurement Information
PARAMETER
TEST CONDITIONS
MIN
TYP MAX
UNIT
SUPPLY
VIN
Input voltage range(1)
Device operating
2
15
V
IOUT = 0mA, Device not switching, EN = VIN,
11
18
A
regulator sleeps
IQ
Quiescent current
IOUT = 0mA, Device switching, VIN = 8 V, VOUT =
13
A
1.8V
VIN = 5.5 V = VOUT, TJ = 25°C, high-side MOSFET
IActive
Active mode current consumption
240
275
A
switch fully turned on
ISD
Shutdown current
EN = GND, VOUT = SW = 0 V, VIN = 3.6V
(2)
0.3
1.2
A
Falling VIN
1.85
1.95
V
VUVLO
Undervoltage lockout threshold
Rising VIN
2.5
2.61
V
ENABLE, THRESHOLD
VIH TH
Threshold for detecting high EN
2 V
≤ VIN ≤ 15V, rising edge
0.8
1.1
V
VIL TH HYS
Threshold for detecting low EN
2 V
≤ VIN ≤ 15 V, falling edge
0.4
0.6
V
IIN
Input bias current, EN
EN = GND or VIN
0
50
nA
POWER SWITCH
VIN = 3.6 V
2.3
3.4
high-side MOSFET on-resistance
RDS(ON)
VIN = 8V
1.75
2.5
VIN = 3.6 V
1.3
2.5
low-side MOSFET on-resistance
VIN = 8V
1.2
1.75
Forward current limit MOSFET
ILIMF
VIN = 8V, Open loop
200
250
400
mA
high-side
TSD
Thermal shutdown
Increasing junction temperature
150
°C
Thermal shutdown hysteresis
Decreasing junction temperature
20
°C
(1)
The typical required supply voltage for startup is 2.5V. The part is functional down to the falling UVLO (Under Voltage Lockout) threshold
(2)
Shutdown current into VIN pin, includes internal leakage
Copyright 2010, Texas Instruments Incorporated
3
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