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参数资料
| 型号： | TPS65052RSMT |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 电源管理 |
| 英文描述： | 6-CHANNEL POWER SUPPLY SUPPORT CKT, PQCC32 |
| 封装： | 4 X 4 MM, 0.40 MM PITCH, GREEN, PLASTIC, QFN-32 |
| 文件页数： | 34/40页 |
| 文件大小： | 1234K |
| 代理商： | TPS65052RSMT |
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SLVS710A – JANUARY 2007 – REVISED AUGUST 2007
ELECTRICAL CHARACTERISTICS (continued)
VCC = VINDCDC1/2 = 3.6 V, EN = VCC, MODE = GND, L = 2.2 μH, CO = 10 μF. TA = -40°C to 85°C, typical values are at
TA = 25°C (unless otherwise noted).
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
MODE/DATA, EN_DCDC1, EN_DCDC2, DEFLDO1,
VIL
Low-level input voltage
DEFLDO2, DEFLDO3, DEFLDO4, EN_LDO1,
0
0.4
V
EN_LDO2, EN_LDO3, EN_LDO4, DEFDCDC2
MODE/DATA = GND or VI
MODE/DATA, EN_DCDC1, EN_DCDC2,
DEFDCDC2, DEFLDO1, DEFLDO2, DEFLDO3,
0.01
1
μA
DEFLDO4, EN_LDO1, EN_LDO2, EN_LDO3,
IlB
Input bias current
EN_LDO4
TPS65051 and TPS65052 only
V_FB_LDOx = 1 V
100
nA
FB_LDO1, FB_LDO2, FB_LDO3, FB_LDO4
POWER SWITCH
VINDCDC1/2 = 3.6 V
280
630
DCDC1
VINDCDC1/2 = 2.5 V
400
rDS(on)
P-channel MOSFET on resistance
m
VINDCDC1/2 = 3.6 V
280
630
DCDC2
VINDCDC1/2 = 2.5 V
400
Ilkg
P-channel leakage current
VDCDCx = V(DS) = 6 V
1
μA
VINDCDC1/2 = 3.6 V
220
450
DCDC1
VINDCDC1/2 = 2.5 V
320
rDS(on)
N-channel MOSFET on resistance
m
VINDCDC1/2 = 3.6 V
220
450
DCDC2
VINDCDC1/2 = 2.5 V
320
Ilkg
N-channel leakage current
VDCDCx = V(DS) = 6 V
7
10
μA
TPS65050
0.85
1
1.15
TPS65054
2.5 V
≤ VINDCDC1/2 ≤ 6
DCDC1:
A
Forward Current Limit
V
TPS65051, TPS65052,
I(LIMF)
PMOS (High-Side)
1.19
1.4
1.65
TPS65056
and NMOS (Low side)
2.5 V
≤ VINDCDC1/2 ≤ 6
DCDC2:
TPS65050 - TPS65056
0.85
1
1.15
A
V
Thermal shutdown
Increasing junction temperature
150
°C
Thermal shutdown hysteresis
Decreasing junction temperature
20
°C
OSCILLATOR
fSW
Oscillator frequency
2.025
2.25
2.475
MHz
4
Copyright 2007, Texas Instruments Incorporated
Product Folder Link(s): TPS65050, TPS65051, TPS65052 TPS65054, TPS65056
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