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参数资料
| 型号： | TPS65562RGTT |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 稳压器 |
| 英文描述： | 3 A BATTERY CHARGE CONTROLLER, PQCC16 |
| 封装： | GREEN, PLASTIC, QFN-16 |
| 文件页数： | 10/17页 |
| 文件大小： | 632K |
| 代理商： | TPS65562RGTT |
www.ti.com
ABSOLUTE MAXIMUM RATINGS
(1)
RECOMMENDED OPERATING CONDITIONS
DISSIPATION RATINGS
SLVS775 – JUNE 2007
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION
TA
PACKAGE(1)
ORDERABLE PART NUMBER
TOP-SIDE MARKING
–35
°C to 85°C
CAH
16-pin QFN
TPS65562RGT
(1)
Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at
www.ti.com/sc/package.
over operating free-air temperature range (unless otherwise noted)
UNIT
VCC, IGBT_VCC
–0.6 to 6
Supply voltage
V
VBAT
–0.6 to 13
VSW
Switch terminal voltage
–0.6 to 50
V
ISW
Switch current between SW and PGND
3
A
VI
Input voltage of CHG, I_PEAK, F_ON
–0.3 to VCC
V
Tstg
Storage temperature
–40 to 150
°C
TJ
Maximum junction temperature
125
°C
ESD rating
HBM (Human Body Model) JEDEC JES22-A114
1
kV
(1)
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
MIN MAX
UNIT
VCC
2.7
4
Supply voltage
IGBT_VCC
2.7
5.5
V
VBAT
1.6
12
VSW
Switch terminal voltage
–0.3
45
V
ISW
Switch current between SW and PGND
2
A
Operating free-air temperature range
–35
85
°C
VIH
High-level digital input voltage at CHG and F_ON
2
V
VIL
Low-level digital input voltage at CHG and F_ON
0.5
V
POWER RATINGS
POWER RATINGS RATE
PACKAGE
RθJA
(1)
TA < 25°C
TA = 70°C
TA = 85°C
QFN
47.4
°C/W
2.11 W
1.16 W
844 mW
(1)
The thermal resistance, RθJA, is based on a soldered PowerPAD package on 2S2P JEDEC board using thermal vias.
2
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相关代理商/技术参数 |
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| TPS65562RGTTG4 | 功能描述:功率驱动器IC Photo flash charger w/ IGBT driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TPS65563ARGTR | 功能描述:功率驱动器IC Integr Photo Flash Charger & IGBT Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TPS65563ARGTRG4 | 功能描述:功率驱动器IC Integ Photo Flash Charger & IGBT Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TPS65563ARGTT | 功能描述:其他电源管理 Integr Photo Flash Charger & IGBT Drvr RoHS:否 制造商:Texas Instruments 输出电压范围: 输出电流:4 mA 输入电压范围:3 V to 3.6 V 输入电流: 功率耗散: 工作温度范围:- 40 C to + 110 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-48 封装:Reel |
| TPS65563ARGTTG4 | 功能描述:功率驱动器IC Integ Photo Flash Charger & IGBT Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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