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参数资料
| 型号： | TPS65562RGTT |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 稳压器 |
| 英文描述： | 3 A BATTERY CHARGE CONTROLLER, PQCC16 |
| 封装： | GREEN, PLASTIC, QFN-16 |
| 文件页数： | 11/17页 |
| 文件大小： | 632K |
| 代理商： | TPS65562RGTT |
www.ti.com
ELECTRICAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
SLVS775 – JUNE 2007
TA = 25°C, VBAT = 4.2 V, VCC = 3 V, IGBT_VCC = 3 V, V(SW) = 4.2 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
RONL
ON resistance of XFULL
IXFULL = –1 mA
1.5
3
k
VPKH
(1)
Upper threshold voltage of I_PEAK
VCC = 3 V
2.4
V
VPKL
(1)
Lower threshold voltage of I_PEAK
VCC = 3 V
0.6
V
ICC1
Supply current from VBAT
CHG = H, VSW = 0 V (free run by tMAX)
17
50
μA
ICC2
Supply current from VCC
CHG = H, VSW = 0 V (free run by tMAX)
1.3
3
mA
ICC3
Supply current from VCC and VBAT
CHG = L
1
μA
ILKG1
Leakage current of SW terminal
2
μA
ILKG2
Leakage current of XFULL terminal
VXFULL = 5 V
1
μA
VI_PEAK = 3 V, CHG: High
2
Isink
Sink current at I_PEAK
μA
VI_PEAK = 3 V, CHG: Low
0.1
RONSW
SW ON resistance between SW and PGND
ISW = 1 A, VCC = 3 V
0.4
0.9
RIGBT1
G_IGBT pull up resistance
VG_IGBT = 0 V, IGBT_VCC = 3 V
8
12
19.4
RIGBT2
G_IGBT pull down resistance
VG_IGBT = 3 V, IGBT_VCC = 3 V
36
53
70
IPEAK1
Upper peak of ISW
VI_IPEAK = 3 V
1.58
1.68
1.78
A
IPEAK2
Lower peak of ISW
VI_IPEAK = 0 V
0.7
0.8
0.9
A
VBAT = 1.6 V, VCC = 3 V
28.0
28.7
29.4
V
VFULL
Charge completion detect voltage at V(SW)
VCC = 3 V
28.6
29.0
29.4
V
VZERO
Zero current detection at VSW
1
20
60
mV
TSD
(1)
Thermal shutdown temperature
150
160
170
°C
OVDS
Over current detection at VSW
0.95
1.2
1.45
V
TMIX
MAX OFF time
25
50
80
μs
TMAX
MAX ON time
50
100
160
μs
RINPD
Pull down resistance of CHG, F_ON
VCHG = VF_ON = 4.2 V
100
k
(1)
Specified by design
TA =25°C, VBAT = 4.2 V, VCC = 3 V, IGBT_VCC = 3 V, VSW =4.2 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
F_ON
↑↓ G_IGBT↑↓
50
ns
SW ON after VSW dips from VZERO
500
ns
SW OFF after ISW exceeds IPEAK
270
ns
tPD
(1)
Propagation delay
XFULL
↓ after VSW exceeds V
Full
400
ns
SW ON after CHG
↑
12
μs
SW OFF after CHG
↓
20
ns
(1)
Specified by design
3
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