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参数资料
| 型号： | TPS65563ARGTT |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 电源管理 |
| 英文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PQCC16 |
| 封装： | 3 X 3 MM, GREEN, PLASTIC, QFN-16 |
| 文件页数： | 13/18页 |
| 文件大小： | 745K |
| 代理商： | TPS65563ARGTT |
ELECTRICAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
SLVS858A – JULY 2008 – REVISED AUGUST 2008......................................................................................................................................................... www.ti.com
TA = 25°C, VBAT = 4.2 V, VCC = 3 V, IGBT_VCC = 3 V, VSW = 4.2 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
CHG = VCC, F_ON = GND,
ICC1
Supply current from VBAT
140
200
A
F_EN = GND, XFULL = Hi-Z
CHG = VCC, F_ON = GND,
ICC2
Supply current from VCC
2
3
mA
F_EN = GND, XFULL = Hi-Z
CHG = GND, F_ON = VCC,
ICC3
Supply current from IGBT_VCC
14
20
A
F_EN = VCC
Supply current from VCC, IGBT_VCC,
CHG = GND, F_ON = GND,
ICC4
1
A
and VBAT
F_EN = GND
ILKG1_SW
Leakage current of SW
VSW = 4.2 V
2
A
ILKG2_SW
Leakage current of SW
VSW = 45 V
500
A
Isink
Sink current at I_PEAK
VCC = VI_PEAK = 3 V
0.1
A
IPEAK1
Lower point of ISW
VI_PEAK = 0.1V
0.42
0.62
0.82
A
IPEAK2
Middle point of ISW
VI_PEAK = 0.65 V
1.1
1.3
1.5
A
IPEAK3
Upper point of ISW
VI_PEAK = 1.5 V
1.8
2
2.2
A
RON_XFULL
ON resistance between XFULL and GND
IX_FULL = 1 mA
1.5
3
k
RON_SW
ON resistance between SW and GND
ISW = 1 A, VCC = 3 V
0.4
0.7
RG_IGBT_N
G_IGBT_N ON resistance
IG_IGBT_N = 100 mA
3
5
7.5
RG_IGBT_P
G_IGBT_P ON resistance
IG_IGBT_P = 100 mA
3
5
7.5
Pulldown resistance of CHG, F_ON,
RINPD
VCHG, VF_ON, VF_EN = 3 V
100
k
and F_EN
TSD
(1)
Thermal shutdown detection temperature
140
150
160
°C
VBAT+2
VBAT+
VBAT+2
VFULL
Charge completion detection voltage at SW
V
8.6
29
9.4
VBAT
VBAT+
VBAT
VZERO
Zero current detection at SW
V
+10m
25m
+40m
Overcurrent protection trigger voltage
VBAT
VOCP
V
at SW
–150m
–100m
–50m
(1)
Specified by design
TA = 25°C, VBAT = 4.2 V, VCC and IGBT_VCC = 3 V, VSW = 4.2 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
G_IGBT turns high/low after F_ON/F_EN turns high/low
25
SW OFF after ISW exceeds the threshold defined by I_PEAK
75
ns
tPD
(1)
Propagation delay
XFULL turns low after VSW exceeds VFULL
200
SW ON after CHG turns high
50
150
s
(1)
Specified by design
4
Copyright 2008, Texas Instruments Incorporated
Product Folder Link(s): TPS65563A
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