- 您现在的位置：买卖IC网 > Datasheet目录147 > TRA3225 (ON Semiconductor)DIODE 250V 32A MICRODE BUTTON Datasheet资料下载
参数资料
| 型号： | TRA3225 |
| 厂商： | ON Semiconductor |
| 文件页数： | 4/8页 |
| 文件大小： | 71K |
| 描述： | DIODE 250V 32A MICRODE BUTTON |
| 产品变化通告： | Product Discontinuation 02/Jan/2007 |
| 标准包装： | 5,000 |
| 二极管类型： | 标准 |
| 电压 - (Vr)（最大）： | 250V |
| 电流 - 平均整流 (Io)： | 32A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.15V @ 100A |
| 速度： | 标准恢复 >500ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 20µA @ 250V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | Microde 按钮 |
| 供应商设备封装： | Microde 按钮 |
| 包装： | 散装 |
TRA3225
http://onsemi.com
4
Figure 6. Thermal Response
t, TIME (ms)
1000
10
1
Figure 7. Typical Capacitance
VR, REVERSE VOLTAGE (V)
100
10
1
0.1
10
100
1000
Figure 8. Forward Recovery Time Figure 9. Reverse Recovery Time
IF, FORWARD CURRENT (A) IR/IF, RATIO OF REVERSE TO FORWARD CURRENT
10
1
0.1
1
10
1
0.1
1
10
100
C, CAPACITANCE (pF)
T
T
r(t), TRANSIENT THERMAL RESISTANCE
100
0.1
10±1
10±2
100
TJ
= 25
°C
, FORWARD RECOVERY TIME ( s)
FR
VFR
= 2.0 V
VFR
= 1.0 V
, REVERSE RECOVERY TIME ( s)
RR
IF
= 1 A
IF
= 10 A
RJC(t)
= R
JC
?
r(t)
Note 1
VF
TJ
= 25
°C
TFR
VFR
TJ
= 25
°C
TRR
IR
0.25 IR
IF
0
To determine maximum junction temperature of the diode in a given
situation, the following procedure is recommended.
The temperature of the case should be measured using a thermocou-
ple placed on the case at the temperature reference point (see the
outline drawing on page 1). The thermal mass connected to the case
is normally large enough so that it will not significantly respond to heat
surges generated in the diode as a result of pulse operation once
steady state conditions are achieved.
Using the measured value of TC, the junction temperature may be
determined by:
Where TJC
is the increase in junction temperature above the case
temperature, it may be determined by:
DUTY CYCLE, D = tp/t1
PEAK POWER, Ppk
is peak of an
equivalent square power pulse
Ppk
Ppk
tp
t1
where:
NOTE 1
TJ
= T
C
+
TJC
TJC
= P
pk
R
JC
[D + (1 ± D)
r(t
1
+ t
p) + r(tp) ± r(t1)]
r(t) = normalized value of transient thermal resistance at
time, t, from Figure 6, i.e.:
r(t1
+ t
p) = normalized value of transient thermal resistance
at time t1
+ t
p.
相关PDF资料 |
PDF描述 |
|---|---|
| UF1006-T | DIODE ULTRA FST SW 800V 1A DO-41 |
| UF1507S-T | DIODE ULT FAST 1.5A 1000V DO-41 |
| UF2006-T | DIODE ULT FAST 2A 800V DO-15 |
| UF3007-T | DIODE ULT FAST 3A 1000V DO-201AD |
| UF3008-G | DIODE ULT FAST 3A 100V DO-201AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TRA3225/D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Medium-Current Silicon Rectifier |
| TRA3-2411 | 制造商:Traco Power 功能描述:DC/DC converter,Isolated,5V,600mA,3W |
| TRA3-2412 | 制造商:Traco Power 功能描述:DC/DC converter,Isolated,12V,250mA,3W |
| TRA3-2413 | 制造商:Traco Power 功能描述:DC/DC converter,Isolated,15V,200mA,3W |
| TRA3-2419 | 制造商:Traco Power 功能描述:DC/DC converter,Isolated,9V,333mA,3W |
发布紧急采购，3分钟左右您将得到回复。