参数资料
型号: TS339IDT
厂商: 意法半导体
英文描述: Micropower Quad CMOS Voltage Comparators
中文描述: 微四路CMOS电压比较器
文件页数: 2/9页
文件大小: 117K
代理商: TS339IDT
Absolute Maximum Ratings
TS339
2/9
1
Absolute Maximum Ratings
Table 1.
Key parameters and their absolute maximum ratings
Symbol
Parameter
Value
Unit
V
CC+
Supply Voltage
(1)
1.
All voltage values, except differential voltage, are with respect to network ground terminal.
18
V
V
id
Differential Input Voltage
(2)
2.
Differential voltages are the non-inverting input terminal with respect to the inverting input terminal.
±18
V
V
i
Input Voltage
(3)
3.
Excursions of input voltages may exceed the power supply level. As long as the common mode voltage
[V
icm
=(V
in+
+ V
in-
)/2] remains within the specified range, the comparator will provide a stable output state.
However, the maximum current through the ESD diodes (IF) of the input stage must strictly be observed.
18
V
V
o
Output Voltage
18
V
I
o
Output Current
20
mA
I
F
Forward Current in ESD Protection Diodes on Inputs
(4)
4.
Guaranteed by design.
50
mA
p
d
Power Dissipation
(5)
DIP14
SO14
TSSOP14
5.
Pd is calculated with T
amb
= +25°C, T
j
= +150°C and
R
thja
= 80 °C/W for DIP14 package
R
thja
= 150 °C/W for SO14 package
R
thja
= 175°C/W for TSSOP14 package
1500
830
710
mW
T
stg
Storage Temperature Range
-65 to +150
°C
ESD
HBM: Human Body Model
(6)
6.
Human body model, 100pF discharged through a 1.5k
resistor into pin of device.
50
V
MM: Machine Model
(7)
7.
Machine model ESD, a 200pF cap is charged to the specified voltage, then discharged directly into the IC with
no external series resistor (internal resistor < 5
), into pin to pin of device.
40
V
CDM: Charged Device Model
800
V
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