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参数资料
| 型号： | TS86101G2BCGL |
| 厂商： | E2V TECHNOLOGIES PLC |
| 元件分类： | DAC |
| 英文描述： | PARALLEL, WORD INPUT LOADING, 10-BIT DAC, CBGA255 |
| 封装： | HERMETIC SEALED, CERAMIC, BGA-255 |
| 文件页数： | 31/57页 |
| 文件大小： | 1030K |
| 代理商： | TS86101G2BCGL |
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37
0992D–BDC–04/09
e2v semiconductors SAS 2009
TS86101G2B
Figure 11-2. Simplified Thermal Models for CI-CGA 255 Package
Notes:
1. Typical values, assuming that the power dissipation is uniform over 25% of the die’s top surface, are extracted from ANSYS
thermal simulation.
2. CI-CGA 255 package is hermetic.
12. Applying the TS86101G2B MUXDAC
12.1
Accessing Power Supplies
The TS86101G2B MUXDAC features three different power supplies (V
CCD, VEED and VEEA) as well as
two different ground planes (analog ground plane AGND and digital ground plane DGND). We highly
recommend that the analog and digital planes be fully separated (both at board level and externally).
Silicon Junction
Case were all Bottom of Columns
are connected to infinite heatsink :
Infinite heatsink
at bottom of columns
2.0
0.6
Bottom
center of
package
Assumptions :
Square die 7.91x7.91=62.6 mm2,
60 m thick Cyanate Ester/Ag glue,
0.85 mm ceramic thickness under die,
Pb90Sn10 columns diameter 0.89 mm
2.02 mm length under bottom of LGA,
21x21 mm CLGA.
"around"
center of
package
"around"
center of
package
Edge of
package
(Bottom of
48 Columns
around
die footprint)
(Bottom of
Columns
of 4x4array
at center
which are
under die)
(Bottom of
80 Columns
around
die footprint)
(Bottom of 111
others Columns
which are
at peripheral)
Silicon Junction
0.80C/Watt
0.8C/Watt
0.20C/Watt
λ = 0.40 W/cm/C
λ = 0.17 W/cm/C
Al2O3 Interposer
Columns
PbSn
SnPb solder
Ceramic package
Cyanate Ester/Ag glue
Ceramic package
λ = 0.02 W/cm/C
λ = 0.17 W/cm/C
(Bottom half of thickness)
(Top half of thickness)
C/Watt
5.6
1.6
2.6C/Watt
Silicon Die
62.6 mm2
λ = 0.95 W/cm/C
5.6
1.6
Top of lid
C/Watt
0.6
2.0
4.1C/Watt
C/Watt
1.0
1.6
0.4
0.3
2.8 C/Watt
0.4C/Watt
0.80
2.6
0.8
0.20
Infinite heatsink
at bottom of columns
Reduction
(Result using SPICE, thermal to
electrical equivalent model)
Silicon
Junction
1.6
0.4
4.1
1.0
2.8
0.3
4.52C/Watt
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