参数资料
型号: TSC87251G2D-L16CE
厂商: Atmel
文件页数: 4/77页
文件大小: 0K
描述: IC MCU 8BIT 32K OTP 16MHZ 44VQFP
标准包装: 160
系列: 8x251
核心处理器: C251
芯体尺寸: 8/16-位
速度: 16MHz
连通性: EBI/EMI,I²C,Microwire,SPI,UART/USART
外围设备: POR,PWM,WDT
输入/输出数: 32
程序存储器容量: 32KB(32K x 8)
程序存储器类型: OTP
RAM 容量: 1K x 8
电压 - 电源 (Vcc/Vdd): 2.7 V ~ 5.5 V
振荡器型: 内部
工作温度: 0°C ~ 70°C
封装/外壳: 44-LQFP
包装: 托盘
12
AT/TSC8x251G2D
4135F–8051–11/06
compatibility with the C51 Architecture). When PC increments beyond the end of seg-
ment FE:, it continues at the reset address FF:0000h (linearity). When PC increments
beyond the end of segment 01:, it loops to the beginning of segment 00: (this prevents
from its going into the reserved area).
Data Memory
The TSC80251G2D derivatives implement 1 Kbyte of on-chip data RAM. Figure 5
shows the split of the internal and external data memory spaces. This memory is
mapped in the data space just over the 32 bytes of registers area (see TSC80251 Pro-
grammers’ Guide). Hence, the part of the on-chip RAM located from 20h to FFh is bit
addressable. This on-chip RAM is not accessible through the program/code memory
space.
F o r f a st er com put atio n w i th t he on- chip R O M / EPR O M cod e o f the
TSC83251G2D/TSC87251G2D, its upper 16 KB are also mapped in the upper part of
the region 00: if the On-Chip Code Memory Map configuration bit is cleared (EMAP# bit
in UCONFIG1 byte, see Figure ). However, if EA# is tied to a low level, the
TSC80251G2D derivative is running as a ROMless product and the code is actually
fetched in the corresponding external memory (i.e. the upper 16 KB of the lower 32 KB
of the segment FF:). If EMAP# bit is set, the on-chip ROM is not accessible through the
region 00:.
All the accesses to the portion of the data space with no on-chip memory mapped onto
are redirected to the external memory.
Figure 5.
Data Memory Mapping
On-chip ROM/EPROM
Code Memory
Data Segments
Data External
Memory Space
16 KB
EA# = 0
EA# = 1
32 KB
Reserved
64 KB
47 KB
FF:FFFFh
FF:8000h
FF:7FFFh
FF:0000h
FE:FFFFh
FE:0000h
FD:FFFFh
01:FFFFh
01:0000h
02:0000h
00:FFFFh
00:0420h
32 bytes reg.
RAM Data
1 Kbyte
16 KB
00:C000h
00:BFFFh
EMAP# = 1
EMAP# = 0
16 KB
64 KB
相关PDF资料
PDF描述
PIC16LF73-I/SO IC MCU FLASH 4KX14 A/D 28SOIC
TSC80251G2D-L16CE IC MCU 8BIT 16MHZ LO VOLT 44VQFP
DSPIC33EP64GP502-I/SP IC DSC 16BIT 64KB FLASH 28SPDIP
DSPIC33EP64GP504-I/PT IC DSC 16BIT 64KB FLASH 44TQFP
52610-2890 CONN FFC/FPC 28POS 1MM VERT SMD
相关代理商/技术参数
参数描述
TSC87251G2D-L16CER 功能描述:IC MCU 8BIT 32K OTP 16MHZ 44VQFP RoHS:否 类别:集成电路 (IC) >> 嵌入式 - 微控制器, 系列:8x251 标准包装:1,500 系列:AVR® ATtiny 核心处理器:AVR 芯体尺寸:8-位 速度:16MHz 连通性:I²C,LIN,SPI,UART/USART,USI 外围设备:欠压检测/复位,POR,PWM,温度传感器,WDT 输入/输出数:16 程序存储器容量:8KB(4K x 16) 程序存储器类型:闪存 EEPROM 大小:512 x 8 RAM 容量:512 x 8 电压 - 电源 (Vcc/Vdd):2.7 V ~ 5.5 V 数据转换器:A/D 11x10b 振荡器型:内部 工作温度:-40°C ~ 125°C 封装/外壳:20-SOIC(0.295",7.50mm 宽) 包装:带卷 (TR)
TSC873CT A3 功能描述:两极晶体管 - BJT NPN Silicon Planar Med Power Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
TSC873CW RPG 功能描述:两极晶体管 - BJT NPN Silicon Planar Med Power Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
TSC888AILT 功能描述:电流灵敏放大器 Sense Amplifier 20 Gain RoHS:否 制造商:Texas Instruments 通道数量: 共模抑制比(最小值):110 dB 输入补偿电压:80 uV 电源电压-最大:5.5 V 电源电压-最小:2.7 V 电源电流:350 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-16 封装:Reel
TSC888BILT 功能描述:电流灵敏放大器 Sense Amplifier 50 Gain RoHS:否 制造商:Texas Instruments 通道数量: 共模抑制比(最小值):110 dB 输入补偿电压:80 uV 电源电压-最大:5.5 V 电源电压-最小:2.7 V 电源电流:350 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-16 封装:Reel