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参数资料
| 型号： | TSFF5200 |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | High Speed IR Emitting Diode in ? mm (T-13/4) Package |
| 中文描述： | 高速红外发光二极管？毫米（翻译- 13 / 4）包装 |
| 文件页数： | 1/6页 |
| 文件大小： | 87K |
| 代理商： | TSFF5200 |
TSFF5200
Vishay Telefunken
1 (6)
Rev. 2, 29-Jun-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81060
High Speed IR Emitting Diode in 5 mm (T–1 )
Package
Description
TSFF5200 is a high speed infrared emitting diode in
GaAlAs on GaAlAs double hetero (DH) technology,
molded in a clear, untinted plastic package.
The new technology combines the high speed of DH–
GaAlAs with the efficiency of standard GaAlAs and the
low forward voltage of the standard GaAs technology.
Features
High modulation bandwidth (35 MHz)
Extra high radiant power and radiant intensity
Low forward voltage
Suitable for high pulse current operation
Standard T–1 ( 5 mm) package
Angle of half intensity
=
±
10
Peak wavelength
p
= 870 nm
High reliability
Good spectral matching to Si photodetectors
94 8390
Applications
IInfrared video data transmission between Camcorder and TV set.
Free air data transmission systems with high modulation frequencies or
high data transmission rate requirements.
Absolute Maximum Ratings
T
amb
= 25 C
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
Symbol
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
Value
5
100
300
1
250
100
–25...+85
–25...+85
260
300
Unit
V
mA
mA
A
mW
C
C
C
C
K/W
t
p
/T = 0.5, t
p
= 100 s
t
p
= 100 s
t
5sec, 2 mm from case
相关PDF资料 |
PDF描述 |
|---|---|
| TSFF5210 | High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero |
| TSFF5400 | High Speed IR Emitting Diode in ? mm (T-13/4) Package |
| TSHA620 | GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package |
| TSHA6200 | GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package |
| TSHA6201 | GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TSFF5210 | 功能描述:红外发射源 10 Degree 250mW 5 Volt 100mA RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| TSFF5210_08 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero |
| TSFF5210_09 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero |
| TSFF5210CS12 | 制造商:Vishay Semiconductors 功能描述: |
| TSFF5210-CS12 | 制造商:Vishay Intertechnologies 功能描述:IR EMITTER DH 870NM 10DEG 5 制造商:Vishay Intertechnologies 功能描述:IR EMITTER, DH 870NM, 10DEG, 5MM, 制造商:Vishay Intertechnologies 功能描述:IR EMITTER, DH 870NM, 10DEG, 5MM,; Peak Wavelength:870nm; Forward Current If(AV):100mA; Rise Time:15ns; Fall Time tf:15ns; Radiant Intensity:180mW/Sr; Viewing Angle:20; Operating Temperature Min:-40C; Operating Temperature ;RoHS Compliant: Yes |
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