参数资料
型号: TSFF5200
厂商: Vishay Intertechnology,Inc.
英文描述: High Speed IR Emitting Diode in ? mm (T-13/4) Package
中文描述: 高速红外发光二极管?毫米(翻译- 13 / 4)包装
文件页数: 2/6页
文件大小: 87K
代理商: TSFF5200
TSFF5200
Vishay Telefunken
2 (6)
Rev. 2, 29-Jun-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81060
Basic Characteristics
T
amb
= 25 C
Parameter
Forward Voltage
Test Conditions
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 s
I
F
= 100mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 s
I
F
= 100 mA, t
p
= 20 ms
I
F
= 100 mA
Symbol
V
F
V
F
TK
VF
I
R
C
j
I
e
I
e
Min
Typ
1.45
2.5
–2.4
Max
1.6
3.0
Unit
V
V
mV/K
A
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
MHz
Temp. Coefficient of V
F
Reverse Current
Junction Capacitance
Radiant Intensity
10
160
160
1600
40
–0.5
±
10
870
40
0.2
10
10
35
80
800
Radiant Power
Temp. Coefficient of
e
Angle of Half Intensity
Peak Wavelength
Spectral Bandwidth
Temp. Coefficient of
p
Rise Time
Fall Time
Cut–Off Frequency
e
TK
e
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
DC
= 70 mA, I
AC
= 30 mA pp
p
TK
p
t
r
t
f
f
c
Typical Characteristics
(T
amb
= 25 C unless otherwise specified)
0
20
T
amb
– Ambient Temperature (
°
C )
40
60
80
0
50
100
150
200
250
P
V
100
16111
R
thJA
Figure 1. Power Dissipation vs. Ambient Temperature
0
20
T
amb
– Ambient Temperature (
°
C )
40
60
80
0
50
100
150
200
250
I
F
100
16112
R
thJA
Figure 2. Forward Current vs. Ambient Temperature
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相关代理商/技术参数
参数描述
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