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参数资料
| 型号： | TSL257SM-LF |
| 厂商： | AMS-TAOS USA Inc |
| 文件页数： | 3/9页 |
| 文件大小： | 580K |
| 描述： | IC LIGHT-VOLTAGE SMD SIDELOOKER |
| 标准包装： | 1 |
| 系列： | * |
| 其它名称： | TSL257-SM-LFDKR TSL257-SM-LFDKR-ND TSL257SM-LFDKR |
TSL257
HIGH-SENSITIVITY
LIGHT-TO-VOLTAGE CONVERTER
TAOS023E SEPTEMBER 2007
2
r
r
Copyright E 2007, TAOS Inc.
The LUMENOLOGY r Company
www.taosinc.com
Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage, V
DD
(see Note 1)
6 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output current, I
O
?0 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Duration of short-circuit current at (or below) 25癈
5 s
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range, T
A
25癈 to 85癈
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
stg
25癈 to 85癈
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds (S Package)
260癈
. . . . . . . . . . . . . . . . . . . .
Reflow solder, in accordance with J-STD-020C or J-STD-020D (SM Package)
260癈
. . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltages are with respect to GND.
Recommended Operating Conditions
MIN
MAX
UNIT
Supply voltage, V
DD
2.7
5.5
V
Operating free-air temperature, T
A
0
70
癈
Electrical Characteristics at V
DD
= 5 V, T
A
= 25?/SPAN>C, ?/SPAN>
p
= 470 nm, R
L
= 10 k?/SPAN> (unless otherwise noted)
(see Notes 2 and 3)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
D
Dark voltage
E
e
= 0
0
15
mV
V
DD
= 4.5 V,
No Load
4.49
V
OM
Maximum output voltage swing
V
DD
= 4.5 V,
R
L
= 10 k?/DIV>
4
4.2
V
V
O
Output voltage
E
e
= 1.54 糤/cm
2
, ?/DIV>
p
= 470 nm, Note 5
1.6
2
2.4
V
?/DIV>
VD
Temperature coefficient of dark voltage (V
D
)
T
A
= 0癈 to 70癈
15
糣/癈
?/DIV>
p
= 428 nm, see Notes 4 and 8
1.18
?/DIV>
p
= 470 nm, see Notes 5 and 8
1.30
N
e
Irradiance responsivity
?/DIV>
p
= 565 nm, see Notes 6 and 8
1.58
V/(糤/cm
2
)
?/DIV>
p
= 645 nm, see Notes 7 and 8
1.68
PSRR
Power supply rejection ratio
f
ac
= 100 Hz, see Note 9
55
dB
f
ac
= 1 kHz, see Note 9
35
dB
I
DD
Supply current
E
e
= 1.54 糤/cm
2
, ?/DIV>
p
= 470 nm, Note 5
1.9
3.5
mA
NOTES: 2. Measured with R
L
= 10 k?between output and ground.
3. Optical measurements are made using small-angle incident radiation from a light-emitting diode (LED) optical source.
4. The input irradiance is supplied by a GaN/SiC light-emitting diode with the following characteristics: peak wavelength ?/DIV>
p
= 428 nm,
spectral halfwidth 敾?= 65 nm.
5. The input irradiance is supplied by an InGaN light-emitting diode with the following characteristics: peak wavelength ?/DIV>
p
= 470 nm,
spectral halfwidth 敾?= 35 nm.
6. The input irradiance is supplied by a GaP light-emitting diode with the following characteristics: peak wavelength ?/DIV>
p
= 565 nm,
spectral halfwidth 敾?= 28 nm.
7. The input irradiance is supplied by an AlGaAs light-emitting diode with the following characteristics: peak wavelength ?/DIV>
p
= 645 nm,
spectral halfwidth 敾?= 25 nm.
8. Irradiance responsivity is characterized over the range V
O
= 0.1 V to 4.5 V. The best-fit straight line of Output Voltage V
O
versus
Irradiance E
e
over this range will typically have a positive extrapolated V
O
value for E
e
= 0.
9. Power supply rejection ratio PSRR is defined as 20 log (擵
DD
(f)/擵
O
(f)) with V
DD
(f = 0) = 5 V and V
O
(f = 0) = 2 V.
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