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参数资料
| 型号： | TSL257SM-LF |
| 厂商： | AMS-TAOS USA Inc |
| 文件页数： | 4/9页 |
| 文件大小： | 580K |
| 描述： | IC LIGHT-VOLTAGE SMD SIDELOOKER |
| 标准包装： | 1 |
| 系列： | * |
| 其它名称： | TSL257-SM-LFDKR TSL257-SM-LFDKR-ND TSL257SM-LFDKR |
TSL257
HIGH-SENSITIVITY
LIGHT-TO-VOLTAGE CONVERTER
TAOS023E SEPTEMBER 2007
3
The LUMENOLOGY r Company
r
r
Copyright E 2007, TAOS Inc.
www.taosinc.com
Switching Characteristics at V
DD
= 5 V, T
A
= 25?/SPAN>C, ?/SPAN>
p
= 470 nm, R
L
= 10 k?/SPAN> (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
t
r
Output pulse rise time, 10% to 90% of final value
See Note 10 and Figure 1
160
250
約
t
f
Output pulse fall time, 10% to 90% of final value
See Note 10 and Figure 1
150
250
約
t
s
Output settling time to 1% of final value
See Note 10 and Figure 1
330
約
Integrated noise voltage
f = dc to 1 kHz
E
e
= 0
200
糣rms
f = 10 Hz
E
e
= 0
6
V
n
Output noise voltage, rms
f = 100 Hz
E
e
= 0
6
糣/Hz
rms
n
,
f = 1 kHz
E
e
= 0
7
NOTE 10: Switching characteristics apply over the range V
O
= 0.1 V to 4.5 V.
PARAMETER MEASUREMENT INFORMATION
VOLTAGE WAVEFORM
TEST CIRCUIT
Input
E
e
10%
90%
Output
(see Note B)
t
r
TSL257
R
L
V
DD
2
1
3
+
Output
Pulse
Generator
LED
(see Note A)
t
f
90%
10%
NOTES: A. The input irradiance is supplied by a pulsed InGaN light-emitting diode with the following characteristics: ?/DIV>
p
= 470 nm,
t
r
< 1 約, t
f
< 1 約.
B. The output waveform is monitored on an oscilloscope with the following characteristics: t
r
< 100 ns, Z
i
e 1 M? C
i
d 20 pF.
Figure 1. Switching Times
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