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参数资料
| 型号： | TSM4944D |
| 厂商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | 30V Dual N-Channel MOSFET |
| 中文描述： | 双30V的N沟道MOSFET |
| 文件页数： | 1/4页 |
| 文件大小： | 187K |
| 代理商： | TSM4944D |
Preliminary
TSM4944D
30V Dual N-Channel MOSFET
1/4
Version: Preliminary
SOP-8
Pin Definition:
1. Source 1
2. Gate 1
3. Source 2
4. Gate 2
Features
●
●
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
Application
●
●
Load Switch
Dc-DC Conversion
Ordering Information
Part No.
TSM4944DCS RL
Package
SOP-8
Packing
2.5Kpcs / 13” Reel
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Symbol
V
DS
V
GS
I
D
I
DM
I
S
Limit
30
Unit
V
Gate-Source Voltage
Continuous Drain Current
±20
12.2
V
A
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a,b
30
A
1.9
2.3
A
Ta = 25
o
C
Ta = 75
o
C
Maximum Power Dissipation
P
D
1.2
W
Operating Junction Temperature
Operating Junction and Storage Temperature Range
T
J
+150
o
C
o
C
T
J
, T
STG
-55 to +150
Thermal Performance
Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Maximum DC current limited by the package
b. Surface Mounted on 1” x 1” FR4 Board, t
≤
10 sec.
Symbol
R
JC
R
JA
Limit
1.8
40
Unit
o
C/W
o
C/W
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(m
Ω
)
I
D
(A)
13.2 @ V
GS
= 10V
12.2
30
18 @ V
GS
= 4.5V
9.4
Block Diagram
Dual N-Channel MOSFET
8. Drain 1
7. Drain 1
6. Drain 2
5. Drain 2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TSM4944DCS | 功能描述:MOSFET Dual 30V N channel MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| TSM4944DCS RL | 制造商:SKMI/Taiwan 功能描述:Trans MOSFET N-CH 30V 12.2A 8-Pin SOP T/R 制造商:Taiwan Semiconductor 功能描述:Trans MOSFET N-CH 30V 12.2A 8-Pin SOP T/R |
| TSM4944DCSRL | 制造商:Taiwan Semiconductor 功能描述:Power Mosfet, NN channel 30V 12.2A SOP-8 |
| TSM4946D | 制造商:TSC 制造商全称:Taiwan Semiconductor Company, Ltd 功能描述:60V Dual N-Channel MOSFET |
| TSM4946DCS RLG | 功能描述:MOSFET Dual 30V N Channel Mosfet RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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