参数资料
型号: TSM55N03CP
厂商: Taiwan Semiconductor Co., Ltd.
英文描述: N-Channel Enhancement Mode MOSFET
中文描述: N沟道增强型MOS管
文件页数: 1/3页
文件大小: 132K
代理商: TSM55N03CP
TSM55N03
1-3
2005/04 rev. B
TSM55N03
Preliminary
N-Channel Enhancement Mode MOSFET
V
DS
= 25V
I
D
= 55A
R
DS (on)
, Vgs @ 10V, Ids @ 30A = 6m
R
DS (on)
, Vgs @ 4.5V, Ids @ 30A = 9m
Features
Advanced trench process technology
High Density Cell Design for Ultra Low On-Resistance
Improved Shoot-Through FOM
Fully Characterized Avalanche Voltage and Current
Specially Designed for DC/DC Converters and Motor
Drivers
Block Diagram
Ordering Information
Part No.
Packing
Package
TSM55N03CP
Tape & Reel
TO-252
Absolute Maximum Rating
(T
A
= 25
o
C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
25
V
Gate-Source Voltage
V
GS
±20
V
Continuous Drain Current
I
D
55
Pulsed Drain Current
I
DM
350
A
T
A
= 25
o
C
T
A
= 75
o
C
70
W
Maximum Power Dissipation
P
D
42
W/
o
C
Operating Junction Temperature
T
J
+150
o
C
Operating Junction and Storage Temperature Range
T
J
, T
STG
- 55 to +150
o
C
Single Pulse Drain to Source Avalanche Energy
(V
DD
= 100V, V
GS
=10V, I
AS
=2A, L=10mH, R
G
=25
)
Thermal Performance
E
AS
300
mJ
Parameter
Symbol
Limit
Unit
Lead Temperature (1/8” from case)
T
L
10
S
Junction-to-case Thermal Resistance
R
θ
jc
1.8
Junction to Ambient Thermal Resistance (PCB mounted)
Note: 1. Maximum DC current limited by the package
2. 1-in
2oz Cu PCB board
R
θ
ja
40
o
C/W
Pin assignment:
1. Gate
2. Drain
3. Source
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