参数资料
| 型号： | TV02W101B-G |
| 厂商： | Comchip Technology |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | TVS 200W 100V BIDIRECT SOD-123 |
| 标准包装： | 3,000 |
| 电压 - 反向隔离（标准值）： | 100V |
| 电压 - 击穿： | 111V |
| 功率（瓦特）： | 1000W |
| 电极标记： | 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOD-123 |
| 供应商设备封装： | SOD-123 |
| 包装： | 带卷 (TR) |
SMD Transient Voltage Suppressor
TV02W5V0-G Thru TV02W191-G
Working Peak Reverse Voltage:5.0-190Volts
Peak Pulse Power:200Watts
RoHS Device
Features
SOD-123
-Glass passivated chip.
-Low leakage current.
0.112 (2.81)
-200W peak pulse power capility with a
0.100 (2.51)
10/1000us waveform,repetitive rate
(duty cycle):0.01%.
-Uni and bidirectional unit.
-Excellent clamping capability.
-Very fast response time.
Mechanical data
-Case: Molded plastic.
-Epoxy: UL 94V-0 rate flame retardant.
-Lead: Axial leads, solderable per
MIL-STD-202,method 208 guranteed.
0.040 (1.00)
0.020 (0.50)
0.053 (1.33)
0.037 (0.93)
0.071 (1.78)
0.055 (1.38)
0.152 (3.82)
0.140 (3.51)
0.008 (0.20)max
0.01 (0.25)min
Dimensions in inches and (millimeter)
-Polarity: Color band denotes cathode end
except bipolar.
-Mounting position: Any.
Maximum Rating AND Electrical Characteristics
Ratings at 25 O C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Peak power dissipation at 10/1000μs waveform
Peak power dissipation at 8/20μs waveform
Peak pulse current with a 10/1000μs waveform
Power dissipation on infinite heatsonk at T L = 75°C
Peak forward surge current, 8.3ms single half sone-wave
undirestional only (1)
Operating junction and storage temperature range
Symbol
P PP
P PP
I PP
P D
I FSM
T J ,T STG
Value
200
1000
See next table
0.4
20
-55 to +150
Unit
W
W
A
W
A
°C
Notes:
Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum.
REV:B
QW-BTV15
Comchip Technology CO., LTD.
Page 1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TV02W101B-HF | 功能描述:TVS 二极管 - 瞬态电压抑制器 200W, 100.0V, Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| TV02W101-G | 功能描述:TVS 二极管 - 瞬态电压抑制器 200W, VRWM=100V RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| TV02W101-HF | 功能描述:TVS 二极管 - 瞬态电压抑制器 200W, 100.0V, Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| TV02W110B-G | 功能描述:TVS 二极管 - 瞬态电压抑制器 200W, VRWM=11V RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| TV02W110B-HF | 功能描述:TVS 二极管 - 瞬态电压抑制器 200W, 11.0V, Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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