参数资料
| 型号： | TV50C171JB-G |
| 厂商： | Comchip Technology |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | TVS 5000W 170V BIDIRECT 5% SMC |
| 标准包装： | 3,000 |
| 电压 - 反向隔离（标准值）： | 170V |
| 电压 - 击穿： | 189V |
| 功率（瓦特）： | 5000W |
| 电极标记： | 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DO-214AB，SMC |
| 供应商设备封装： | DO-214AB，（SMC） |
| 包装： | 带卷 (TR) |
SMD Transient Voltage Suppressor
COMCHIP
SMD Diodes Specialist
TV50C110-G Thru. TV50C441-G
Working Peak Reverse Voltage: 11 to 440 Volts
Power Dissipation: 5000 Watts
RoHS Device
Features
-Glass passivated chip.
-5000W peak pulse power capability with a
10/1000 μ s waveform, repetitive rate (duty cycle ):
0.01%.
0.126(3.16)
DO-214AB (SMC)
0.280(7.02)
0.260(6.52)
0.245(6.15)
-Low leakage.
0.114(2.86)
0.220(5.52)
-Excellent clamping capability.
-Very fast response time.
0.320(8.02)
Mechanical data
0.103(2.59)
0.305(7.64)
0.012(0.30)
0.006(0.15)
-Case: JEDEC DO-214AB, molded plastic.
0.079(1.98)
-Terminals: solderable per MIL-STD-750, method
2026.
0.060(1.51)
0.030(0.75)
0.008(0.20)
0.000(0.00)
-Polarity: Color band denotes cathode end.
Dimensions in inches and (millimeter)
-Approx. weight: 0.21 grams
Maximum Ratings and Electrical Characteristics
Ratings at 25 O C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristics
Peak power dissipation with a 10/1000 μ S
waveform
Peak pulse current on 10/1000 μ S waveform
Power dissipation on infinite heatsink at
T L =75 O C
Peak forward surge current, 8.3ms single
half sine-wave uni-directional only (Note 2)
Maximum instantaneous forward voltage
at 100A for uni-directional only (Note 3)
Symbol
P PP
I PP
P D
I FSM
V F
Value
5000
See Next Table
6.5
300
3.5/5.0
Units
Watts
A
Watts
A
V
Operating junction temperature
Storage temperature range
T J
T STG
-55 to +150
-55 to +150
O
O
C
C
1. Non-Repetitive Current pulse per Fig.5 and derated above T A =25 C per Fig .1
Notes:
O
2. Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per maximum per minute maximum.
3. V F <3.5V for devices of V BR <200V and V F <5.0V for devices of V BR >201V
REV:B
QW-BTV14
Comchip Technology CO., LTD.
Page 1
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| TV50C171J-G | 功能描述:TVS 二极管 - 瞬态电压抑制器 5000W, 170V RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| TV50C180JB-G | 功能描述:TVS 二极管 - 瞬态电压抑制器 5000W, 18V RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| TV50C180J-G | 功能描述:TVS 二极管 - 瞬态电压抑制器 5000W, 18V RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| TV50C181JB-G | 功能描述:TVS 二极管 - 瞬态电压抑制器 5000W, 180V RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| TV50C181J-G | 功能描述:TVS 二极管 - 瞬态电压抑制器 5000W, 180V RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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