参数资料
型号: TXS02326MRGER
厂商: Texas Instruments
文件页数: 3/35页
文件大小: 0K
描述: IC SIM CARD MUX 2:1 24VQFN
产品培训模块: Voltage Level Translation
标准包装: 1
应用: 移动电话
接口: I²C
电源电压: 1.7 V ~ 3.3 V
封装/外壳: 24-VFQFN 裸露焊盘
供应商设备封装: 24-VQFN 裸露焊盘(4x4)
包装: 标准包装
安装类型: 表面贴装
其它名称: 296-28065-6
CLK
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
4
2
3
4
3
1
2
0
4
DEB CNT
BSI
BSI_DEB
IRQ
SIMCLK
SIM1 RST
SIM1 CLK
SIM1 I/O
SIM2 RST
SIM2 CLK
SIM2 I/O
Latched RST
Latched Clock
Latched Data
SIM1 VCC
SIM2 VCC
Active Data
SCES795C
– SEPTEMBER 2010 – REVISED FEBRUARY 2011
BSI / SDN DEBOUNCE AND AUTOMATIC SHUTDOWN SEQUENCE TIMING
There are two debounce counters: one each for the BSI and SDN inputs. For each counter, when the device is
reset or the related input is
“false”, the counter is loaded with the value in the associated Debounce Counter
register and the debounced signal (i.e. BSI_DEB or SDN_DEB) is subsequently set to a
“false” state. When the
related input becomes
“true”, the counter begins counting down on subsequent CLK rising-edges. (CLK is either
the internal or external 32 kHz clock as selected by Clock Source Select)
If the input changes state during the count, the counter is again loaded with the register value. The debounce
counter propagates the input signal to the output when the counter expires.
For BSI and BSI_DEB, the
“true” state is high. For SDN and SDN_DEB, the “true” state is the state stored in the
SDN Detection Level register. Once either count reaches zero, the debounced signal switches to the
“true” state
on the next CLK rising edge.
If BSI_DEB goes high and Battery Removal Interrupt (bit 2 of the Device Control Register) is 1, an interrupt is
generated and appears on IRQ. Also, if BSI_DEB goes high and BSI Detection Control (bit 4 of the Device
Control Register) is 0, the Automatic Shutdown sequence begins for both SIM
’s.
If SDN_DEB goes
“true” and SDN Detection Interrupt (bit 5 of the Device Control Register) is 1, an interrupt is
generated and appears on IRQ. Also, if SDN_DEB goes
“true” and SDN Detection Control (bit 7 of the Device
Control Register) is 0, the Automatic Shutdown sequence begins for SIM2 only, leaving SIM1 unaffected.
Figure 2. BSI Debounce Timing
– SIM1 Active and SIM2 Isolated
Notes:
BSI debounce count value set to 4
SIM1 Active, SIM2 powered but Isolated
BSI Detection Control set to 0
Battery Removal Interrupt set to 1
Once BSI is high for four cycles, BSI_DEB goes high causing automatic shutdown sequence on both SIMs.
Since SIM1 is active with SIMCLK running, it follows the staged shutdown sequence. Since SIM2 is powered up
but inactive, it follows the instant shutdown sequence.
2010–2011, Texas Instruments Incorporated
11
Product Folder Link(s): TXS02326
相关PDF资料
PDF描述
TZA1026T/V2,118 IC DATA AMPLIFIER 14-SOIC
TZA1038HW,118 IC DVD SIGNAL PROC 48-HTQFP
UG80960HD5016SL2GM IC MPU I960HD 3V 50MHZ 208-QFP
ULQ2003ATDG4Q1 IC DARLINGTON TRANS ARRAY 16SOIC
UPD70F3025AGC-33-8EU-A MCU 32BIT 256K FLASH 100LQFP
相关代理商/技术参数
参数描述
TXS02326RGER 功能描述:转换 - 电压电平 Dual-Supply Standby SIM Card Mux RoHS:否 制造商:Micrel 类型:CML/LVDS/LVPECL to LVCMOS/LVTTL 传播延迟时间:1.9 ns 电源电流:14 mA 电源电压-最大:3.6 V 电源电压-最小:3 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:MLF-8
TXS02612 制造商:TI 制造商全称:Texas Instruments 功能描述:SDIO PORT EXANDER WITH VOLTAGE-LEVEL TRANSLATION
TXS02612_10 制造商:TI 制造商全称:Texas Instruments 功能描述:SDIO PORT EXANDER WITH VOLTAGE-LEVEL TRANSLATION
TXS02612RTWR 功能描述:转换 - 电压电平 SDIO Port Expander RoHS:否 制造商:Micrel 类型:CML/LVDS/LVPECL to LVCMOS/LVTTL 传播延迟时间:1.9 ns 电源电流:14 mA 电源电压-最大:3.6 V 电源电压-最小:3 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:MLF-8
TXS02612ZQSR 功能描述:接口 - 专用 SDIO Port Expander RoHS:否 制造商:Texas Instruments 产品类型:1080p60 Image Sensor Receiver 工作电源电压:1.8 V 电源电流:89 mA 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:BGA-59