参数资料
型号: TZA1020A
厂商: NXP Semiconductors N.V.
英文描述: Pre-amplifiers for CD-RW systems
中文描述: 前级放大器的CD - RW系统
文件页数: 10/36页
文件大小: 153K
代理商: TZA1020A
2000 Oct 30
18
Philips Semiconductors
Product specication
Pre-ampliers for CD-RW systems
TZA1020; TZA1020A
9
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
10 THERMAL CHARACTERISTICS
11 CHARACTERISTICS
VDD1 =VDD2 =5V; VSS1 =VSS2 = 5 V; Tamb =25 °C; ERON = 1; AMON = 0; IRREF = 900 A; unless otherwise
specied.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VDD
positive supply voltage
0
13.2
V
Tstg
storage temperature
65
+150
°C
Tamb
ambient temperature
0
70
°C
Ves
electrostatic handling voltage:
Machine model
200
+200
V
Human body model
1000
+1000
V
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient
in free air
60
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies
VDD1
positive supply voltage 1
(pin 28)
4.5
5.0
5.5
V
VSS1
negative supply voltage 1
(pin 30)
5.5
5.0
4.5
V
VDD2
positive supply voltage 2
(pin 16)
4.5
5.0
5.5
V
VSS2
negative supply voltage 2
(pin 18)
5.5
5.0
4.5
V
DD
difference between VDD1
and VDD2
0.5
+0.5
V
SS
difference between VSS1
and VSS2
0.5
+0.5
V
IDD(tot)
positive supply current
VDD1 +VDD2
quiescent state
12
mA
maximum current
26
mA
maximum current at
AMON = 1
49
mA
ISS(tot)
negative supply current
VSS1 +VSS2
quiescent state
16
mA
maximum current
25
mA
maximum current at
AMON = 1
33
mA
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