参数资料
型号: TZA1020A
厂商: NXP Semiconductors N.V.
英文描述: Pre-amplifiers for CD-RW systems
中文描述: 前级放大器的CD - RW系统
文件页数: 15/36页
文件大小: 153K
代理商: TZA1020A
2000 Oct 30
22
Philips Semiconductors
Product specication
Pre-ampliers for CD-RW systems
TZA1020; TZA1020A
TSZtr(FTC)
temperature sensitivity for
transimpedance of fast
track circuit
0.2
%/K
FAST TRACK COUNT SIGNAL VOLTAGE OUTPUT; PIN RE
Vo(RE)
output voltage range
3.5
+2.5
V
Voffset(RE)
output offset voltage
cdrwsel = 0
40
0
+40
mV
cdrwsel = 1
100
+25
+150
mV
Ro(RE)
output resistance
minimum diode currents
125
580
B3dB(RE)
bandwidth of RE signal
CL = 20 pF; valid for
complete input current
range
800
kHz
Spot position measurements; see Table 29 and note 7
GAIN SETTINGS
Gcd
gain central diode current
combination
AMON = 0
0.45
0.50
0.55
AMON = 1
0
Gsd
gain satellite diode current
combinations
AMON = 0
0.9
1.00
1.1
AMON = 1
0
OFFSET CURRENTS
Ioffset(MEAS)
offset of MEAS1 current
meassel = 00
1.6
0
+1.6
A
meassel = 01
1.6
0
+1.6
A
offset of MEAS2 current
meassel = 00
1.6
0
+1.6
A
meassel = 01
1.6
0
+1.6
A
Central aperture high frequency output
GI(CAHF)
current gain
cdrwsel = 0;
ΣICI = 180 A
7.5
8.25
9.0
cdrwsel = 1;
ΣI
C1 =50 A
303538
Ioffset(CAHF)
offset current at zero input
current
cdrwsel = 0;
ΣIC1 =0 A
100
A
f3dB
bandwidth (
3 dB), valid
for total current range
Ci = 12 pF; note 8
17
MHz
Ci = 5 pF
19
MHz
t
d
delay variations valid for
total current range
f = 0.1 to 12 MHz
Ci =12pF
0.9
ns
Ci =5pF
1.1
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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