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参数资料
| 型号： | TZMC10-GS08 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 10 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA |
| 封装： | ROHS COMPLIANT, GLASS, MINIMELF-2 |
| 文件页数： | 4/6页 |
| 文件大小： | 7609K |
| 代理商： | TZMC10-GS08 |
TZM-Series
Vishay Semiconductors
Document Number 84122
Rev. 1.5, 19-Apr-11
www.vishay.com
4
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 2. Typical Change of Working Voltage under Operating
Conditions at Tamb = 25°C
Figure 3. Typical Change of Working Voltage vs.
Junction Temperature
0
120
160
0
100
300
400
500
600
P
tot
-
Total
Po
w
er
Dissipation
(m
W
)
T
amb - Ambient Temperature (°C)
200
95 9602
200
80
40
10
15
20
1
10
100
1000
V
Z
-
V
oltage
Change
(m
V
)
VZ - Z-Voltage (V)
25
95 9598
T
j = 25 °C
I
Z = 5 mA
0
5
- 60
60
120
180
0.8
0.9
1.0
1.1
1.2
1.3
V
Ztn
-
Relative
Voltage
Change
Tj - Junction Temperature (°C)
240
95 9599
0
VZtn = VZt/VZ (25 °C)
0
TKVZ = 10 x 10-4/K
8 x 10-4/K
2 x 10-4/K
6 x 10-4/K
4 x 10-4/K
- 4 x 10-4/K
- 2 x 10-4/K
Figure 4. Temperature Coefficient of VZ vs. Z-Voltage
Figure 5. Diode Capacitance vs. Z-Voltage
Figure 6. Forward Current vs. Forward Voltage
- 5
0
5
10
15
VZ - Z-Voltage (V)
95 9600
I
Z = 5 mA
0
10
203040
50
TK
V
Z
-
Temperat
u
re
Coefficient
of
V
Z
(10
-4
/K)
10
15
0
50
100
150
200
C
D
-
Diode
Capacitance
(pF)
VZ - Z-Voltage (V)
25
95 9601
20
T
j = 25 °C
V
R = 2 V
0
5
0
0.2
0.4
0.6
0.8
0.001
0.01
0.1
1
10
100
1.0
95 9605
I F
-
For
w
ard
C
u
rrent
(mA)
VF - Forward Voltage (V)
T
j = 25 °C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TZMC10GS18 | 功能描述:稳压二极管 10 Volt 0.5 Watt 5% RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| TZMC10-GS18 | 制造商:Vishay Intertechnologies 功能描述:TZMC10 Series SOD-80 10V 500mW Zener Diode |
| TZMC10-M | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Small Signal Zener Diodes |
| TZMC10-M-08 | 制造商:Vishay Semiconductors 功能描述:ZENER DIODE SOD80 MINIMELF-E2-M |
| TZMC10-M-18 | 制造商:Vishay Semiconductors 功能描述:ZENER DIODE SOD80 MINIMELF-E2-M |
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