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参数资料
| 型号： | TZMF62-GS08 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 62 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA |
| 封装： | GLASS, MINIMELF-2 |
| 文件页数： | 3/6页 |
| 文件大小： | 101K |
| 代理商： | TZMF62-GS08 |
TZMC...
Vishay Semiconductors
Rev. 4, 12-Mar-01
3 (6)
www.vishay.com
Document Number 85611
Characteristics (Tj = 25_C unless otherwise specified)
0
40
80
120
160
0
100
300
400
500
600
P
–
T
otal
Power
Dissipation
(
mW
)
tot
Tamb – Ambient Temperature ( °C )
200
95 9602
200
Figure 1. Total Power Dissipation vs.
Ambient Temperature
0
5
10
15
20
1
10
100
1000
V
–
V
oltage
Change
(
mV
)
Z
VZ – Z-Voltage ( V )
25
95 9598
D
IZ=5mA
Tj =25°C
Figure 2. Typical Change of Working Voltage under
Operating Conditions at Tamb=25°C
–60
0
60
120
180
0.8
0.9
1.0
1.1
1.2
1.3
V
–
Relative
V
oltage
Change
Ztn
Tj – Junction Temperature ( °C )
240
95 9599
VZtn=VZt/VZ(25°C)
TKVZ=10 10–4/K
8
10–4/K
–4
10–4/K
6
10–4/K
4
10–4/K
2
10–4/K
–2
10–4/K
0
Figure 3. Typical Change of Working Voltage vs.
Junction Temperature
010
20
30
–5
0
5
10
15
TK
–
T
emperature
Coef
ficient
of
V
(
10
/K
)
VZ
VZ – Z-Voltage ( V )
50
95 9600
40
Z
–4
IZ=5mA
Figure 4. Temperature Coefficient of Vz vs. Z–Voltage
0
5
10
15
0
50
100
150
200
C
–
Diode
Capacitance
(
pF
)
D
VZ – Z-Voltage ( V )
25
95 9601
20
Tj =25°C
VR =2V
Figure 5. Diode Capacitance vs. Z–Voltage
0
0.2
0.4
0.6
0.8
0.001
0.01
0.1
1
10
100
1.0
95 9605
I
–
Forward
Current
(
mA
)
F
VF – Forward Voltage ( V )
Tj =25°C
Figure 6. Forward Current vs. Forward Voltage
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