参数资料
型号: U10BCT-E3/4W
厂商: Vishay General Semiconductor
文件页数: 2/5页
文件大小: 143K
描述: DIODE 10A 100V 20NS DUAL TO220-3
标准包装: 1,000
电压 - 在 If 时为正向 (Vf)(最大): 1.1V @ 5A
电流 - 在 Vr 时反向漏电: 5µA @ 100V
电流 - 平均整流 (Io)(每个二极管): 5A
电压 - (Vr)(最大): 100V
反向恢复时间(trr): 25ns
二极管类型: 标准
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 1 对共阴极
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
New Product
U(F,B)10BCT thru U(F,B)10DCT
Vishay General Semiconductor
www.vishay.com For technical questions within your
region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88967
Revision: 13-May-08
2
Notes:
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤
40 ms
ELECTRICAL CHARACTERISTICS (TC
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Maximum instantaneous forward voltage per diode (1)
IF
= 3.0 A
IF
= 5.0 A
TJ
= 25 °C
VF
0.97
1.05
-
1.10
V
IF
= 3.0 A
IF
= 5.0 A
TJ
= 150 °C
0.79
0.89
-
0.95
Maximum reverse current per diode (2)
rated VR
TJ
= 25 °C
TJ
= 100 °C
IR
0.5
100
5.0
200
μA
Maximum reverse recovery time per diode
IF
= 0.5 A, I
R
= 1.0 A,
Irr
= 0.25 A
trr
13 20
ns
IF
= 1.0 A, dI/dt = 100 A/μs,
VR
= 30 V, I
rr
= 0.1 I
RM
19.7 25
Maximum stored charge per diode
IF
= 2 A, dI/dt = 20 A/μs,
VR
= 30 V, I
rr
= 0.1 I
RM
Qrr
39nC
THERMAL CHARACTERISTICS (TC
= 25 °C unless otherwise noted)
PARAMETER SYMBOL U10xCT UF10xCT UB10xCT UNIT
Typical thermal resistance per diode
RθJA
RθJC
25
5.3
25
7.5
25
5.3
°C/W
ORDERING INFORMATION
(Example)
PACKAGE PREFERRED P/N UNIT WEIGHT PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB U10DCT-E3/4W 1.87 4W 50/tube Tube
ITO-220AB UF10DCT-E3/4W 1.77 4W 50/tube Tube
TO-263AB UB10DCT-E3/4W 1.31 4W 50/tube Tube
TO-263AB UB10DCT-E3/8W 1.31 8W 800/reel Tape and reel
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