参数资料
型号: UG30APT-E3/45
厂商: Vishay General Semiconductor
文件页数: 2/4页
文件大小: 87K
描述: DIODE 30A 50V 20NS DUAL TO3P-3
标准包装: 750
电压 - 在 If 时为正向 (Vf)(最大): 1.15V @ 30A
电流 - 在 Vr 时反向漏电: 15µA @ 50V
电流 - 平均整流 (Io)(每个二极管): 30A
电压 - (Vr)(最大): 50V
反向恢复时间(trr): 35ns
二极管类型: 标准
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 1 对共阴极
安装类型: 通孔
封装/外壳: TO-3P-3,SC-65-3
供应商设备封装: TO-3P
包装: 管件
UG30APT thru UG30DPT
Vishay General Semiconductor
www.vishay.com For technical questions within your
region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88762
Revision: 05-Jun-08
2
Note:
(1) Thermal resistance from junction to case per diode mounted on heatsink
RATINGS AND CHARACTERISTICS CURVES
(TA
= 25 °C unless otherwise noted)
Maximum reverse
recovery time
IF
= 0.5 A, I
R = 1.0 A,
Irr = 0.25 A
trr
25 ns
Maximum reverse
recovery time
IF = 15 A, VR = 30 V,
dI/dt = 50 A/μs,
IRR = 10 % IRM
TJ
= 25 °C
TJ
= 100 °C
trr
35
50
ns
Maximum recovered
stored charge
IF = 15 A, VR
= 30 V,
dI/dt = 50 A/μs,
IRR = 10 % IRM
TJ
= 25 °C
TJ
= 100 °C
Qrr
22
50
nC
Typical junction
capacitance
4.0 V, 1 MHz CJ
70 pF
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL UG30APT UG30BPT UG30CPT UG30DPT UNIT
THERMAL CHARACTERISTICS (TA
= 25 °C unless otherwise noted)
PARAMETER SYMBOL UG30APT UG30BPT UG30CPT UG30DPT UNIT
Typical thermal resistance per diode (1)
R
θJC
2.0 °C/W
ORDERING INFORMATION
(Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-247AD UG30DPT-E3/45 6.15 30 30/tube Tube
Figure 1. Maximum Forward Current Derating Curve
0
25
50
75
100
125
150
175
0
6
12
18
24
30
36
A
v
erage For
w
ard Rectified C
u
rrent (A)
Case Temperature (°C)
Resistive or Inductive Load
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
1
10
100
10
100
1000
Number of Cycles at 60 Hz
Peak For
w
ard S
u
rge C
u
rrent (A)
TC
= 120 °C
8.3 ms Single Half Sine-Wave
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