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参数资料
| 型号： | UG30DPT-E3/45 |
| 厂商： | Vishay General Semiconductor |
| 文件页数： | 1/4页 |
| 文件大小： | 87K |
| 描述： | DIODE 30A 200V 20NS DUAL TO3P-3 |
| 标准包装： | 750 |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.15V @ 30A |
| 电流 - 在 Vr 时反向漏电： | 15µA @ 200V |
| 电流 - 平均整流 (Io)（每个二极管）： | 30A |
| 电压 - (Vr)（最大）： | 200V |
| 反向恢复时间(trr)： | 35ns |
| 二极管类型： | 标准 |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 二极管配置： | 1 对共阴极 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-3P-3，SC-65-3 |
| 供应商设备封装： | TO-3P |
| 包装： | 管件 |
UG30APT thru UG30DPT
Vishay General Semiconductor
Document Number: 88762
Revision: 05-Jun-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode Ultrafast Plastic Rectifier
FEATURES
? Glass passivated chip junction
Ultrafast recovery time
Low switching losses, high efficiency
Low forward voltage drop
High forward surge capability
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes,
dc-to-dc converters, and other power switching
application.
MECHANICAL DATA
Case:
TO-247AD (TO-3P)
Epoxy meets UL 94V-0
flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
30 A
VRRM
50 V to 200 V
IFSM
300 A
trr
25 ns
VF
0.85 V
TJ max. 150 °C
PIN 1
PIN 3
CASE
PIN 2
TO-247AD (TO-3P)
1
2
3
MAXIMUM RATINGS (TA
= 25 °C unless otherwise noted)
PARAMETER SYMBOL UG30APT UG30BPT UG30CPT UG30DPT UNIT
Maximum repetitive peak reverse voltage VRRM
50 100 150 200 V
Maximum RMS voltage VRMS
35 70 105 140 V
Maximum DC blocking voltage VDC
50 100 150 200 V
Maximum average forward rectified current at TC
= 120 °C I
F(AV)
30 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
300 A
Operating and storage temperature range TJ, TSTG
- 65 to + 150 °C
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL UG30APT UG30BPT UG30CPT UG30DPT UNIT
Maximum instantaneous
forward voltage per diode
15 A
30 A
10 A TJ
= 100 °C
VF
1.0
1.15
0.85
V
Maximum DC reverse
current at rated DC
blocking voltage per diode
TA
= 25 °C
TA = 100 °C
IR
15
800
μA
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