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参数资料
| 型号： | UM5K1NTR |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2N-CH 30V .1A SOT-353 |
| 产品培训模块： | MOSFETs |
| 产品目录绘图： | UM5K1NTR SOT-353 |
| 特色产品： | ECOMOS? Series MOSFETs |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 100mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 8 欧姆 @ 10mA，4V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 100µA |
| 输入电容 (Ciss) @ Vds： | 13pF @ 5V |
| 功率 - 最大： | 150mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP（5 引线），SC-88A，SOT-353 |
| 供应商设备封装： | UMT5 |
| 包装： | 标准包装 |
| 产品目录页面： | 1638 (CN2011-ZH PDF) |
| 其它名称： | UM5K1NDKR |
UM5K1N
Transistors
2.5V Drive Nch+Nch MOS FET
UM5K1N
Structure
External dimensions (Unit : mm)
Silicon N-channel MOS FET
UMT5
2.0
1.3
0.9
Features
1) Two 2SK3018 transistors in a single UMT package.
2) Mounting cost and area can be cut in half.
0.65 0.65
(5) (4)
0.7
3) Low on-resistance.
1pin mark
(1) (2) (3)
4) Low voltage drive (2.5V) makes this device ideal for
0.2
0.15
portable equipment.
5) Drive circuits can be simple.
Applications
Interfacing, switching (30V, 100mA)
Packaging specifications
Each lead has same dimensions
Abbreviated symbol : K1
Equivalent circui
(6)
(4)
Package
Taping
Type
Code
Basic ordering unit
(pieces)
TR
3000
UM5K1N
Tr1
Tr2
Absolute maximum ratings (Ta=25 ° C)
?
Gate
Protection
?
Gate
Protection
<It is the same ratings for Tr1 and Tr2.>
(1)
Diode
(2)
Diode
(3)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Symbol
V DSS
V GSS
I D
I DP ? 1
Limits
30
±20
±100
±400
Unit
V
V
mA
mA
(1) Tr1 Gate
(2) Source
(3) Tr2 Gate
(4) Tr2 Drain
(6) Tr1 Drain
? A protection diode has been built in between
the gate and the source to protect against
static electricity when the product is in use.
Use the protection circuit when rated
voltagesare exceeded.
Total power dissipation
Channel temperature
Storage temperature
P D ? 2
Tch
Tstg
150
120
150
? 55 to + 150
mW / TOTAL
mW / ELEMENT
?C
?C
? 2 With each pin mounted on the recommended lands.
? 1 Pw ≤ 10 μ s, Duty cycle ≤ 50%
Thermal resistance
Parameter
Symbol
Limits
Unit
Channel to ambient
Rth(ch-a)
?
833
1042
° C / W / TOTAL
° C / W / ELEMENT
? With each pin mounted on the recommended lands.
Rev.A
1/3
相关PDF资料 |
PDF描述 |
|---|---|
| UM6J1NTN | MOSFET 2P-CH 30V 200MA UMT6 |
| UM6K1NTN | MOSFET 2N-CH 30V .1A SOT-363 |
| UNI-SDK-RWD | EVAL KIT FOR RFID/USB/RS232 |
| UPA2200T1M-T1-AT | MOSFET N-CH 30V VSOF-SLIM |
| UPA2201T1M-T1-AT | MOSFET N-CH 20V VSOF-SLIM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| UM5K1NTR-CUT TAPE | 制造商:ROHM 功能描述:Dual N-Channel 30 V 13 Ohm 150 mW Surface Mount 4 V Drive Mosfet - UMT-5 |
| UM-5MJ | 制造商:QUARTZCOM 制造商全称:QUARTZCOM the communications company 功能描述:Metal packaged SMD Crystal Wide frequency range: 8 to 250 MHz |
| UM-5MJSLIM | 制造商:QUARTZCOM 制造商全称:QUARTZCOM the communications company 功能描述:Metal packaged SMD Crystal Wide frequency range: 8 to 250 MHz |
| UM5N | 制造商:VANLONG 制造商全称:VANLONG 功能描述:Surface Mount |
| UM5N_13 | 制造商:VANLONG 制造商全称:VANLONG 功能描述:Surface Mount UM5N |
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