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参数资料
| 型号： | UNR411XSERIES(UN411XSERIES) |
| 英文描述： | UNR411X Series (UN411X Series) - PNP Transistors with built-in Resistor |
| 中文描述： | UNR411X系列（UN411X系列） -新进步党内置晶体管，电阻， |
| 文件页数： | 2/15页 |
| 文件大小： | 376K |
| 代理商： | UNR411XSERIES(UN411XSERIES) |
2
UNR41XX Series
SJH00018CED
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
I
CEO
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
0.1
0.5
0.5
0.2
μ
A
Emitter
cutoff
current
UNR4111
I
EBO
mA
UNR4112/4114/411D/
411E/411M/411N
UNR4113
0.1
0.01
1.0
1.5
2.0
UNR4110/4115/4116/4117
UNR411F/411H
UNR4119
UNR4118/411L
Collector to base voltage
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CE
=
10 V, I
C
=
5 mA
50
50
V
Collector to emitter voltage
V
CEO
h
FE
V
DC
UNR4111
35
current
UNR4112/411E
60
gain
UNR4113/4114/411M
80
UNR4110
*
/41115
*
/4116
*
/
4117
*
160
460
UNR4118/411L
20
UNR4119/411D/411F/411H
30
UNR411N
80
400
Collector to emitter saturation voltage
V
CE(sat)
I
C
=
10 mA, I
B
=
0.3 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
3.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
10 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
6 V, R
L
=
1 k
V
CB
=
10 V, I
E
=
2 mA, f
=
200 MHz
0.25
V
High level output voltage high level
V
OH
4.9
V
Low level output voltage
V
OL
0.2
V
UNR4113
UNR411D
UNR411E
Transition frequency
f
T
80
MHz
Input
UNR4118
R
1
30%
0.51
+
30%
k
resistance UNR4119
1
UNR411H/411M
2.2
UNR4116/411F/411L/411N
4.7
UNR4111/4114/4115
10
UNR4112/4117
22
UNR4110/4113/411D/411E
47
Rank
Q
R
S
h
FE
160 to 260
210 to 340
290 to 460
Note)*: h
FE
rank classification (UNR4110/4115/4116/4117)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| UNR4121 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:UNR412x Series (UN412x Series) Silicon PNP epitaxial planar type |
| UNR4121(UN4121) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:複合デバイス － 抵抗内蔵型トランジスタ |
| UNR412100A | 功能描述:TRANS PNP W/RES 40HFE NS-B1 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路﹐预偏压式 系列:- 标准包装:10,000 系列:- 晶体管类型:NPN - 预偏压 电流 - 集电极 (Ic)（最大）:100mA 电压 - 集电极发射极击穿（最大）:50V 电阻器 - 基极 (R1)（欧）:47k 电阻器 - 发射极 (R2)（欧）:47k 在某 Ic、Vce 时的最小直流电流增益 (hFE):70 @ 5mA，5V Ib、Ic条件下的Vce饱和度（最大）:300mV @ 500µA，10mA 电流 - 集电极截止（最大）:- 频率 - 转换:100MHz 功率 - 最大:250mW 安装类型:表面贴装 封装/外壳:SC-70，SOT-323 供应商设备封装:PG-SOT323-3 包装:带卷 (TR) 其它名称:SP000756242 |
| UNR4122 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | SPAK |
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