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参数资料
| 型号： | UNR511V(UN511V) |
| 英文描述： | 複合デバイス － 抵抗内蔵型トランジスタ |
| 中文描述： | 複合デバイス-抵抗内蔵型トランジスタ |
| 文件页数： | 3/18页 |
| 文件大小： | 634K |
| 代理商： | UNR511V(UN511V) |
11
Transistors with built-in Resistor
UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Characteristics charts of UNR511D
IC — VCE
VCE(sat) — IC
hFE — IC
Cob — VCB
IO — VIN
VIN — IO
Characteristics charts of UNR511E
IC — VCE
VCE(sat) — IC
hFE — IC
0
–12
– 2
–10
– 4
– 8
– 6
– 60
– 50
– 40
– 30
– 20
–10
Collector to emitter voltage VCE (V)
Collector
current
I
C
(mA
)
Ta=25C
IB= –1.0mA
– 0.9mA
– 0.8mA
– 0.7mA
– 0.6mA
– 0.5mA
– 0.4mA
– 0.3mA
– 0.2mA
– 0.1mA
–0.01
–0.03
– 0.1 – 0.3
– 0.1
– 0.3
–1
– 3
–10
– 30
–100
–1
– 3
–10
– 30
–100
Collector current IC (mA)
Collector
to
emitter
saturation
voltage
V
CE(sat)
(V
)
IC/IB=10
Ta=75C
25C
– 25C
0
–1
– 3
40
80
120
160
–10
– 30
–100 – 300 –1000
Forward
current
transfer
ratio
h
FE
Collector current IC (mA)
VCE= –10V
Ta=75C
25C
– 25C
0
– 0.1 – 0.3
6
5
4
3
2
1
–1
– 3
–10
– 30
–100
Collector
output
capacitance
C
ob
(pF
)
Collector to base voltage
VCB (V)
f=1MHz
IE=0
Ta=25C
–1
– 3
–1.5
–10
– 30
–100
– 300
–1000
–3000
–10000
– 4.0
– 3.5
– 3.0
– 2.5
– 2.0
Output
current
I
O
(
A
)
Input voltage VIN (V)
VO= – 5V
Ta=25C
–0.01
–0.03
–0.1
–0.3
– 0.1
– 0.3
–1
– 3
–10
– 30
–100
–1
–3
–10
–30
–100
Input
voltage
V
IN
(V
)
Output current IO (mA)
VO= – 0.2V
Ta=25C
0
–12
– 2
–10
– 4
– 8
– 6
– 60
– 50
– 40
– 30
– 20
–10
Collector to emitter voltage VCE (V)
Collector
current
I
C
(mA
)
Ta=25C
IB= –1.0mA
– 0.9mA
– 0.8mA – 0.7mA
– 0.6mA
– 0.5mA
– 0.4mA
– 0.3mA
– 0.2mA
– 0.1mA
–0.01
–0.03
– 0.1 – 0.3
– 0.1
– 0.3
–1
– 3
–10
– 30
–100
–1
– 3
–10
– 30
–100
Collector current IC (mA)
Collector
to
emitter
saturation
voltage
V
CE(sat)
(V
)
IC/IB=10
Ta=75C
25C
– 25C
0
–1
– 3
100
200
300
400
–10
– 30
–100 – 300 –1000
Forward
current
transfer
ratio
h
FE
Collector current IC (mA)
VCE=–10V
Ta=75C
25C
– 25C
相关PDF资料 |
PDF描述 |
|---|---|
| UNR511XSERIES(UN511XSERIES) | UNR511X Series (UN511X Series) - PNP Transistors with built-in Resistor |
| UNR511Z(UN511Z) | 複合デバイス － 抵抗内蔵型トランジスタ |
| UNR5115Q | TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-70 |
| UNR5115R | TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-70 |
| UNR5115S | TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-70 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| UNR511XSERIES(UN511XSERIES) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:UNR511X Series (UN511X Series) - PNP Transistors with built-in Resistor |
| UNR511Z | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
| UNR511Z(UN511Z) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:複合デバイス － 抵抗内蔵型トランジスタ |
| UNR5154 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type For digital circuits |
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