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参数资料
| 型号： | UPA1890 |
| 厂商： | NEC Corp. |
| 英文描述： | N- AND P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | N和P沟道MOS场效应晶体管开关 |
| 文件页数： | 1/12页 |
| 文件大小： | 95K |
| 代理商： | UPA1890 |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2000
MOS FIELD EFFECT TRANSISTOR
μ
PA1890
N- AND P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No.
Date Published
Printed in Japan
G14762EJ1V0DS00 (1st edition)
March 2000 NS CP(K)
DESCRIPTION
The
μ
PA1890 is a switching device which can be driven directly
by a 4.0-V power source.
The
μ
PA1890 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
FEATURES
Can be driven by a 4.0-V power source
Low on-state resistance
N-Channel R
DS(on)1
= 27 m
MAX. (V
GS
= 10 V, I
D
= 3.0 A)
R
DS(on)2
= 37 m
MAX. (V
GS
= 4.5 V, I
D
= 3.0 A)
R
DS(on)3
= 47 m
MAX. (V
GS
= 4.0 V, I
D
= 3.0 A)
P-Channel R
DS(on)1
= 37 m
MAX. (V
GS
= –10 V, I
D
= –2.5 A)
R
DS(on)2
= 56 m
MAX. (V
GS
= –4.5 V, I
D
= –2.5 A)
R
DS(on)3
= 64 m
MAX. (V
GS
= –4.0 V, I
D
= –2.5 A)
Built-in G-S protection diode against ESD
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA1890GR-9JG
Power TSSOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
N-Channel / P-Channel
Drain to Source Voltage
V
DSS
30/–30
V
Gate to Source Voltage
V
GSS
±
20/
#
20
±
6.0
/
#
5.0
±
24
/
#
20
2.0
V
Drain Current (DC)
Drain Current (pulse)
Note1
Total Power Dissipation
Note2
I
D(DC)
A
I
D(pulse)
A
P
T
W
Channel Temperature
T
ch
150
°C
Storage Temperature
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1 %
2.
Mounted on ceramic substrate of 5000
mm
2
x 1.1
mm
T
stg
–55 to +150
°C
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit : mm)
1
4
8
5
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
0
±
0.1
0.8 MAX.
3.15 ±0.15
3.0 ±0.1
0.65
0.10 M
0.27
+0.03
0.25
0.5
0.6
+0.15
3
°
+5
°
–3
°
1.2 MAX.
1.0±0.05
0.1±0.05
1 :Drain1
2, 3 :Source1
4 :Gate1
5 :Gate2
6, 7 :Source2
8 :Drain2
EQUIVALENT CIRCUIT
Source1
Body
Diode
Gate
Protection
Diode
Gate1
Drain1
Source2
Body
Diode
Gate
Protection
Diode
Gate2
Drain2
P-Channel
N-Channel
To keep good radiate condition,
it is recommended that all pins
are soldering to print board.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| UPA1890GR-9JG | 制造商:NEC 制造商全称:NEC 功能描述:N- AND P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1890GR-9JG-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA1890GR-9JG-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA1900 | 制造商:NEC 制造商全称:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1900TE | 制造商:NEC 制造商全称:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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