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参数资料
| 型号： | UPA2719GR-A |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 30 V, 0.0255 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | POWER, SOP-8 |
| 文件页数： | 4/6页 |
| 文件大小： | 140K |
| 代理商： | UPA2719GR-A |
Data Sheet G16953EJ1V0DS
4
PA2719GR
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
-
Dr
ain
Cur
rent
-
A
0
-25
-50
-75
-100
-125
0
-0.5
-1
-1.5
-2
Pulsed
VGS =
10 V
4 V
4.5 V
VDS - Drain to Source Voltage - V
I
D
-
Dr
ain
Cur
rent
-
A
-0.01
-0.1
-1
-10
-100
0
-1-2-3-4-5
VDS =
10 V
Pulsed
TA = 150°C
75°C
25°C
40°C
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
S
(off)
-
Gate
C
ut
-off
Voltage
-
V
0
-0.5
-1
-1.5
-2
-2.5
-50
0
50
100
150
VDS =
10 V
ID =
1 mA
Tch - Channel Temperature -
°C
|
y
fs
|-
Forward
T
ransfer
Admittan
ce
-
S
0.01
0.1
1
10
100
-0.01
-0.1
-1
-10
-100
VDS =
10 V
Pulsed
TA = 150°C
75°C
25°C
40°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(
on)
-Drain
to
S
ource
On
-state
Re
sistance
-m
0
10
20
30
40
-1
-10
-100
-1000
Pulsed
VGS =
10 V
4.5 V
4 V
ID - Drain Current - A
R
DS(
on)
-Drain
to
S
ource
On
-state
Re
sistance
-m
0
10
20
30
40
0
-5
-10
-15
-20
ID =
5 A
Pulsed
VGS - Gate to Source Voltage - V
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