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参数资料
| 型号： | UPA2719GR-A |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 30 V, 0.0255 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | POWER, SOP-8 |
| 文件页数： | 5/6页 |
| 文件大小： | 140K |
| 代理商： | UPA2719GR-A |
Data Sheet G16953EJ1V0DS
5
PA2719GR
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
R
DS(
on)
-Drain
to
S
ource
On
-state
Re
sistance
-m
0
10
20
30
-50
0
50
100
150
ID =
5 A
Pulsed
VGS =
10 V
4.5 V
4 V
Tch - Channel Temperature - °C
C
is
s,
C
os
s,
C
rss
-Capacitance
-pF
10
100
1000
10000
-0.1
-1
-10
-100
VGS = 0 V
f = 1 MHz
Ciss
Crss
Coss
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d(
on)
,t
r,t
d(
off)
,t
f-
Swi
tching
Time
-ns
1
10
100
1000
10000
-0.1
-1
-10
-100
VDD =
15 V
VGS =
10 V
RG = 10
td(off)
tf
tr
td(on)
ID - Drain Current - A
V
DS
-
D
rain
to
So
urce
Voltage
-
V
0
-10
-20
-30
020
40
60
0
-5
-10
-15
ID =
10 A
VDD =
24 V
15 V
6 V
VDS
VGS
QG - Gate Charge - nC
V
GS
-
Gate
to
So
urce
Voltage
-
V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
I
F-
Diode
Fo
rwa
rd
Curren
t-
A
0.01
0.1
1
10
100
1000
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Pulsed
VGS =
10 V
0 V
VF(S-D) - Source to Drain Voltage - V
t
rr-
Rev
ers
eRec
ov
ery
Ti
me
-ns
10
100
1000
0.1
1
10
100
VGS = 0 V
di/dt = 50 A/
s
IF - Diode Forward Current - A
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