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参数资料
| 型号： | UPA2790GR |
| 厂商： | NEC Corp. |
| 英文描述： | SWITCHING N- AND P-CHANNEL POWER MOS FET |
| 中文描述： | 开关N沟道和P沟道功率场效应晶体管 |
| 文件页数： | 1/11页 |
| 文件大小： | 198K |
| 代理商： | UPA2790GR |
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2004
MOS FIELD EFFECT TRANSISTOR
μ
PA2790GR
SWITCHING
N- AND P-CHANNEL POWER MOS FET
DATA SHEET
Document No. G16954EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
DESCRIPTION
The
μ
PA2790GR is N- and P-channel MOS Field Effect
Transistors designed for Motor Drive application.
FEATURES
Low on-state resistance
N-channel R
DS(on)1
= 28 m
MAX. (V
GS
= 10 V, I
D
= 3 A)
R
DS(on)2
= 40 m
MAX. (V
GS
= 4.5 V, I
D
= 3 A)
P-channel R
DS(on)1
= 60 m
MAX. (V
GS
=
10 V, I
D
=
3 A)
R
DS(on)2
= 80 m
MAX. (V
GS
=
4.5 V, I
D
=
3 A)
Low input capacitance
N-channel C
iss
= 500 pF TYP.
P-channel C
iss
= 460 pF TYP.
Built-in gate protection diode
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA2790GR
Power SOP8
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
0.12 M
6.0 ±0.3
4.0
0.40
1.27
0.6
1
4
8
5
+0.11
0
1
1.0
0.5 ±0.2
0
+
–
5.37 Max.
0.10
1
2
7, 8
3
4
5, 6
: Source 1
: Gate 1
: Drain 1
: Source 2
: Gate 2
: Drain 2
N-channel
P-channel
EQUIVALENT CIRCUITS
N-channel
P-channel
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
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| UPA2791GR | MOS FIELD EFFECT TRANSISTOR SWITCHING N- AND P-CHANNEL POWER MOS FET |
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| UPA2791GR-E2-AT | MOS FIELD EFFECT TRANSISTOR SWITCHING N- AND P-CHANNEL POWER MOS FET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| UPA2790GR-E1-A | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA2790GR-E1-AT | 功能描述:MOSFET N/P-CH 30V 8-SOIC RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:- 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR |
| UPA2790GR-E2-AT | 功能描述:MOSFET N/P-CH 30V 8-SOIC RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:- 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR |
| UPA2791GR | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N- AND P-CHANNEL POWER MOS FET |
| UPA2791GR-E1-AT | 功能描述:MOSFET N/P-CH 30V 8-SOIC RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:- 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR |
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