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参数资料
| 型号： | UPA2791GR-E2-AT |
| 厂商： | NEC Corp. |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR SWITCHING N- AND P-CHANNEL POWER MOS FET |
| 中文描述： | MOS场效应晶体管的开关N沟道和P沟道功率场效应晶体管 |
| 文件页数： | 10/12页 |
| 文件大小： | 245K |
| 代理商： | UPA2791GR-E2-AT |
Data Sheet G18207EJ2V0DS
10
μ
PA2791GR
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
D
Ω
0
20
40
60
80
100
120
140
160
-50
0
50
100
150
I
D
=
3.0 A
Pulsed
V
GS
=
4.5 V
10 V
T
ch
- Channel Temperature -
°
C
i
,
o
,
r
10
100
1000
-0.01
-0.1
-1
-10
-100
C
iss
C
oss
C
rss
V
GS
= 0 V
f = 1 MHz
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
d
,
r
,
d
,
f
1
10
100
-0.1
-1
-10
-100
t
d(off)
t
d(on)
t
f
t
r
V
DD
=
15 V
V
GS
=
10 V
R
G
= 10
Ω
I
D
- Drain Current - A
D
0
-5
-10
-15
-20
-25
-30
0
2
4
6
8
10
12
0
-2
-4
-6
-8
-10
-12
V
DS
V
GS
I
D
=
5 A
V
DD
=
24 V
15 V
6 V
Q
G
- Gate Charge - nC
G
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
F
0.001
0.01
0.1
1
10
100
0
0.5
1
1.5
Pulsed
0 V
V
GS
=
4.5 V
V
F(S-D)
- Source to Drain Voltage - V
r
1
10
100
0.1
1
10
100
V
GS
= 0 V
di/dt = 50 A/
μ
s
I
F
- Diode Forward Current - A
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